Enhanced Performance of Near-Infrared Perovskite Light-Emitting Diodes with PEDOT:PSS Buffer Layer.

Shaowen Chen, Xiaodong Chi, Piaoyang Shen, Chaoyu Xiang

Abstract read

In one paragraph

Article in Molecules (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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Authors and funding

4 authors.

Shaowen ChenSchool of Materials Science and Chemical Engineering, Ningbo University, Ningbo 315211, China.

Xiaodong ChiLaboratory of Optoelectronic Information Technology and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

Piaoyang ShenLaboratory of Optoelectronic Information Technology and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

Chaoyu XiangLaboratory of Optoelectronic Information Technology and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

Funding

China Postdoctoral Science Foundation 2025M780802Key Research and Development Program of Ningbo 2024Z146Key Research and Development Program of Ningbo 2025Z079National Key R&D Program of China 2022YFB3602902National Natural Science Foundation of China U23A2092Ningbo 3315 Programme 2020A-01-BPostdoctoral Science Preferential Funding of Zhejiang Province ZJ2025105the Hangzhou Joint Fund of Zhejiang Provincial Natural Science Foundation of China under Grant No.HZSZ26E020005, "Pioneer" and "Leading Goose" R&D Program of Zhejiang 2024C01191，2024C01092the Key projects of National Natural Science Foundation of China 62234004YONGJIANG Talent Introduction Programme 2021A-038-BYONGJIANG Talent Introduction Programme 2025A-155-G

6 · The paper itself

Abstract

Perovskite light-emitting diodes (PeLEDs) have attracted considerable attention due to their outstanding electroluminescent properties and have achieved remarkable progress. However, charge injection imbalance remains a major obstacle limiting the performance of near-infrared (NIR) PeLEDs. Herein, we propose inserting a poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) buffer layer between ITO and Zinc oxide (ZnO) to reduce electron injection. This layer also acts as a substrate to modulate ZnO surface roughness, thereby improving perovskite film quality. Through this optimization, the device's external quantum efficiency (EQE) increases from 20% to 22%, and its T

Indexed as

balanced carrier injectionbuffer layernear-infraredperovskite light-emitting diodes

Identifiers

PMID42357383

DOI10.3390/molecules31121984

PMCPMC13304203

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