Effect of Eutectic Silicon on the Electrical Conductivity of Al-Si Alloys Using Principal Component Regression Analysis.

The microstructure of as-cast Al-xSi (x = 4, 7, 10) alloys solidified under various cooling rates was characterized using scanning electron microscopy (SEM). To overcome the multicollinearity among eutectic silicon parameters, Principal Component Regression (PCR) analysis was employed to quantitatively evaluate the effects of silicon morphology, scale, and content on the electrical conductivity of the alloys. The results demonstrate that rapid solidification significantly refines the plate-like eutectic silicon and reduces its volume fraction, leading to improved electrical conductivity. The PCR model shows that a hierarchical mechanism: volume fraction (PC1) acts as the principal determinant, increasing baseline resistance primarily by truncating the electron mean free path (MFP); meanwhile, within identical alloy systems, morphological parameters (PC2) play a dominant regulatory role. A semi-quantitative electron drift path model was established, confirming that the morphological deviation of eutectic silicon from a spherical shape (i.e., increased aspect ratio) causes a non-linear increase in the amplitude of electron detours. This geometric elongation significantly degrades electrical conductivity, providing theoretical guidance for the microstructural design of high-conductivity Al-Si alloys, which can be practically applied to the manufacturing and optimization of lightweight, heat-dissipating enclosures for new energy vehicle (NEV) motors and power distribution systems.