Evidence map›Paper›PMID 42354773›Full record

ArticleMicromachines2026

Effects of Dielectric Interlayer on Polarization Switching and Rectifying Characteristics in Al

Jong Min Park, Hyeong Jun Joo, Yoojin Lim, Juno Bae, Brendan Hanrahan, Geonwook Yoo

Abstract read
In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Jong Min ParkDepartment of Intelligent Semiconductor, Soongsil University, Seoul 06938, Republic of Korea.
Hyeong Jun JooDepartment of Intelligent Semiconductor, Soongsil University, Seoul 06938, Republic of Korea.
Yoojin LimDepartment of Intelligent Semiconductor, Soongsil University, Seoul 06938, Republic of Korea.
Juno BaeDepartment of Intelligent Semiconductor, Soongsil University, Seoul 06938, Republic of Korea.
Brendan HanrahanDEVCOM Army Research Laboratory, Adelphi, MD 20783, USA.
Geonwook YooDepartment of Intelligent Semiconductor, Soongsil University, Seoul 06938, Republic of Korea.ORCID 0000-0002-7826-9005

Funding

National Research Foundation of Korea RS-2024-00438811National Research Foundation of Korea RS-2024-00455423
6 · The paper itself

Abstract

Ferroelectric (FE) diodes configured in the metal-ferroelectric-metal (MIFM) structure are promising candidates for non-volatile memory. While recent studies emphasized bulk FE properties, interfacial characteristics have not been carefully considered. In this work, we investigate the HfO

Indexed as

AlScNferroelectric diodeinterfacialmetal–insulator–ferroelectric-metaloxygen substitutional defect

Identifiers

PMID42354773
PMCPMC13304364

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.