ArticleAdvanced materials (Deerfield Beach, Fla.)2026
Space-Confined Chemical Vapor Deposition of 2D FeS With Crossover Magnetoresistance and Ultra-High Conductivity.
Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
2D iron chalcogenides (FeX, X = S, Se, Te) are emerging as an appealing class of materials, owing to their intriguing physical properties (e.g., 2D magnetism, interface superconductivity), and great potentials in next-generation applications (e.g., spintronics, quantum computing). Recently, FeS has attracted particular attentions due to the discovery of altermagnetism in bulk state. However, the intrinsic physical properties of 2D FeS are still unclear, since the syntheses of high-quality FeS with thicknesses down to 2D limit remain challenging. Herein, we report the direct syntheses of thickness-tunable, high-quality 2D FeS flakes with low defect density and thus strict stoichiometry, via a space-confined chemical vapor deposition (CVD) strategy. Significantly, we observe an unsaturated magnetoresistance with a crossover behavior (positive-negative-positive with decreasing the temperature from ≈350 to ≈2 K), and an ultra-high conductivity (≈2.8 × 10
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