ArticleNanomaterials (Basel, Switzerland)2026
An Ether-Containing Hafnium-Diethylene Glycol Dry Resist Prepared by Molecular Layer Deposition for Mild-Acid Development.
Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Advanced lithography, including electron beam lithography (EBL), X-ray lithography (XRL), and extreme ultraviolet lithography (EUVL), imposes stringent requirements on photoresists in resolution, sensitivity, and process compatibility, thereby driving the development of metal-containing hybrid resists and vapor-phase deposition strategies. However, existing Hf-based dry hybrid photoresists often struggle to provide sufficient dissolution contrast for clean pattern formation under mild development, as unexposed regions are not fully removed. In this work, an ether-containing hafnium-based photoresist was fabricated by molecular layer deposition (MLD). Incorporation of the diethylene glycol (DEG)-derived ether unit modifies the local coordination environment of the hybrid film and enhances the removability of the unexposed regions, enabling removal in 0.1 M HCl. FTIR and XPS analyses reveal that exposure disrupts Hf-O-C coordination motifs and converts the initial hybrid network into a more HfO
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