ArticleSmall methods2026
Dual-Functional Metal Interlayer Enables High-Quality GaN Epitaxy and Low-Damage Transfer Towards Flexible Optoelectronics.
Article in Small methods, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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1 citing paper in PubMed.
- Topologically Optimized Copper Pre-Orienting Layer Enabled High-Quality GaN Micropyramid Epitaxy on Amorphous Glass.Materials (Basel, Switzerland) · 2026Article
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6 authors.
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Abstract
High-quality GaN epitaxy and transfer are essential for flexible optoelectronics. Yet, the trade-off between strong covalent-bonded interfaces for epitaxy and weak forces for exfoliation hinders the simultaneous achievement of high-quality epitaxy and intact transfer. To address this, we report a dual-functional metal-interlayer chemical lift-off (MI-CLO) strategy. To the best of our knowledge, this is the first demonstration of a metallic interlayer serving as both an epitaxial template and a dissolvable sacrificial layer, facilitating both single-crystalline GaN thin film growth and low-damage transfer to flexible substrates. Our results demonstrate that the copper (Cu) interlayer yields superior surface morphology and crystalline integrity of the epilayer than nickel, despite their structural similarities. By incorporating a Cu interlayer and composite buffer layers, we obtain a 33-µm GaN film on sapphire with the (0002) rocking curve full width half maximum as low as 0.10°. A 5-µm GaN thin film exhibits a low threading dislocation density (8 × 10
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