Evidence map›Paper›PMID 42322263›Full record

ArticleACS applied materials & interfaces2026

Gigahertz Cutoff Frequencies and High Gain in Graphene-Based Hot-Electron Transistor Enabled by Material Engineering.

Carsten Strobel, André Heinzig, Andre Hiess, Martin Knaut, Md Tarik Hossain, Andrey Turchanin, Tilo Meister, Frank Ellinger, Jens Trommer, Viktor Havel and 1 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in ACS applied materials & interfaces, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Carsten StrobelInstitute of Semiconductors and Microsystems, Chair of Nanoelectronics, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.ORCID 0000-0002-0943-5372
André HeinzigInstitute of Semiconductors and Microsystems, Chair of Nanoelectronics, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.
Andre HiessInstitute of Semiconductors and Microsystems, Chair of Nanoelectronics, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.
Martin KnautInstitute of Semiconductors and Microsystems, Chair of Nanoelectronics, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.ORCID 0000-0001-9377-0925
Md Tarik HossainFriedrich-Schiller-Universität Jena, Lessingstraße 10, 07743 Jena, Germany.ORCID 0000-0003-0249-5302
Andrey TurchaninFriedrich-Schiller-Universität Jena, Lessingstraße 10, 07743 Jena, Germany.ORCID 0000-0003-2388-1042
Tilo MeisterChair of Circuit Design and Network Theory, Technische Universität Dresden, Helmholtzstraße 18, 01069 Dresden, Germany.ORCID 0000-0001-6429-0105
Frank EllingerChair of Circuit Design and Network Theory, Technische Universität Dresden, Helmholtzstraße 18, 01069 Dresden, Germany.
Jens TrommerNaMLab gGmbH, Nöthnitzer Str. 64 a, 01187 Dresden, Germany.ORCID 0000-0003-2972-438X
Viktor HavelNaMLab gGmbH, Nöthnitzer Str. 64 a, 01187 Dresden, Germany.
Thomas MikolajickInstitute of Semiconductors and Microsystems, Chair of Nanoelectronics, Technische Universität Dresden, Nöthnitzer Straße 64, 01187 Dresden, Germany.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Graphene (Gr)-based hot-electron transistors (GHETs) offer high potential for high-frequency applications due to the extremely thin nature of graphene as a base material. For the first time we present GHETs with excellent DC device characteristics and gigahertz operation achieved by an optimization of the emitter-base (E/B) composition. The optimized E/B composition enables more efficient injection of hot electrons into the base, thereby improving charge transport and reducing scattering losses. As a result, a record-high measured common-emitter current gain beta of 42 was achieved using a SiO

Indexed as

2D materialscurrent gaincutoff frequencygigahertzgraphenehot-electron transistortransistor

Identifiers

PMID42322263
PMCPMC13339028

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.