Evidence map›Paper›PMID 42321173›Full record

ArticleNature communications2026

Gradient-distributed metal-halide dynamic memristors for adaptive and robust voiceprint recognition.

He Shao, Jianyu Ming, Ruiheng Wang, Wei Yang, Xiang He, Jintao Sun, Benxin Liu, Wen Li, Li Gao, You Meng and 4 more

Abstract read
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

14 authors.

He Shao *State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Jianyu Ming *State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Ruiheng WangState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Wei YangState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Xiang HeState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Jintao SunState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Benxin LiuState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Wen LiState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.
Li GaoState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.ORCID http://orcid.org/0000-0003-2465-5784
You MengChangsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China.ORCID http://orcid.org/0000-0002-5385-4080
Linghai XieState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China.ORCID http://orcid.org/0000-0001-6294-5833
Johnny C HoDepartment of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China. johnnyho@cityu.edu.hk.ORCID http://orcid.org/0000-0003-3000-8794
Haifeng LingState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China. iamhfling@njupt.edu.cn.ORCID http://orcid.org/0000-0001-8555-0391
Wei HuangState Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing, China. vc@nwpu.edu.cn.ORCID http://orcid.org/0000-0001-7004-6408

Funding

National Natural Science Foundation of China (National Science Foundation of China) 62288102
6 · The paper itself

Abstract

Inspired by the auditory system's capacity to process spatiotemporal sound patterns, voiceprint recognition plays a vital role in identity authentication and security. However, current platforms often face challenges of speech frequency and amplitude variability, hindering accurate feature extraction in noisy environments. To address these issues, a large-scale hybrid metal-halide dynamic memristor (MHDM) featuring an engineered gradient-distributed architecture is developed for adaptive voiceprint recognition. The spontaneously graded metal-halide functional layer allows for precise modulation of Schottky barriers and redistribution of interface charges. This design achieves µs-scale response, enhances noise tolerance (over 20% improvement in signal-to-noise ratio), and enables kHz-scale dynamic signal processing. Experimental results demonstrate that the MHDM achieves a voiceprint recognition accuracy of 99.3%, maintaining high performance at 93.2% even in realistic background noise. These findings demonstrate the system's potential for secure and efficient voiceprint recognition, combining scalability with robust performance in noisy environments.

Identifiers

PMID42321173
PMCPMC13433933

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.