ArticleNano letters2026
Large Magnetoresistance in a Si-Based Double-Tunnel Junction with Purely Organic Radical Molecules.
Article in Nano letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Authors and funding
9 authors.
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Abstract
Organic radicals have shown promise for tunable and low-cost spintronic devices. However, integrating the radicals with a Si metal-oxide-semiconductor (MOS) structure remains a challenge. Here, we incorporate stable (4-(((2,5-bis(2-(phenyl)ethynyl)phenyl)carbonyl)(methyl)amino)-2,2,6,6-tetramethylpiperidin-1-yl)oxidanyl (TEMPO-OPE) radicals in a Si-MOS-based double-tunnel junction and demonstrate a huge positive magnetoresistance of up to 400% at a magnetic field of 7 T and a temperature of 3 K. This goes along with a significant reduction of the differential conductance peak corresponding to the highest occupied molecular orbital (HOMO) of TEMPO-OPE under external magnetic fields. First-principles calculations suggest that the singly occupied molecular orbital can mix with the HOMO of TEMPO-OPE. This could lead to suppression of the HOMO conductance peak under magnetic fields and, thus, provide a possible origin of the large magnetoresistance. These findings suggest a path toward incorporating magnetic molecular functionalities into conventional Si devices, leading to large-scale integration of molecular spintronic devices.
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