ArticleNature communications2026
Transfer-printed yellow and red InGaN micro-LEDs on diamond for ultra-low-power high-speed optical interconnects.
Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
The rapid growth of computing demand requires high-speed transmission with low power consumption. Micro-light-emitting diodes (micro-LEDs), offering high modulation bandwidth, low-power operation, and array integration, are promising transmitters for next-generation interconnects. Here, we show yellow and red InGaN micro-LEDs, optimized through superlattice strain engineering and a three-period quantum well design, which were transfer-printed onto diamond, with microlenses fabricated by two-photon lithography for coupling optimization. The 20 µm yellow micro-LED achieved an electrical-to-optical bandwidth of 2850.4 MHz at 6.25 A/cm², while the 20 µm red device reached 2593.4 MHz at 50 A/cm². With on-off keying (OOK) modulation through a 1 m fiber link, 20 µm and 40 µm yellow devices achieved 1.5 Gbps at 25 µA (6.25 A/cm²) and 50 µA (3.125 A/cm²), with energy efficiencies of 0.056 pJ/bit and 0.110 pJ/bit, respectively. This study demonstrates the potential of InGaN yellow and red micro-LEDs for energy-efficient high-speed optical interconnects.
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