Evidence map›Paper›PMID 42301991›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2026

Voltage-Programmable Switching in Halide Perovskite Memristors by Asymmetric Contact Engineering.

Yanwei Fan, Haichuan Ni, Jintian Pan, Deli Li, Qing Song, Yang Liu, Yue Wang, Yonghua Chen, Wei Huang

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Yanwei FanFujian Provincial Key Laboratory of Flexible Electronics, Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
Haichuan NiFujian Provincial Key Laboratory of Flexible Electronics, Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
Jintian PanFujian Provincial Key Laboratory of Flexible Electronics, Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
Deli LiFujian Provincial Key Laboratory of Flexible Electronics, Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.ORCID https://orcid.org/0000-0003-0931-3989
Qing SongFujian Provincial Key Laboratory of Flexible Electronics, Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
Yang LiuFujian Provincial Key Laboratory of Flexible Electronics, Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
Yue WangFujian Provincial Key Laboratory of Flexible Electronics, Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
Yonghua ChenKey Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
Wei HuangFrontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi'an, China.

Funding

National Natural Science Foundation of China 62205062Science and Technology Planning Project of Fujian Province, China 2022J05047Science and Technology Planning Project of Fujian Province, China 2023J01087Science and Technology Planning Project of Fujian Province, China 2023J01530
6 · The paper itself

Abstract

Metal halide perovskites combine mixed ionic-electronic conduction with low-temperature processing, yet most perovskite memristors operate in a single mode, either nonvolatile bipolar resistive switching (RS) or volatile threshold switching (TS). This limits in-device multi-role reuse and drives peripheral overhead. We introduce a single asymmetric transport layer at one contact that makes bias polarity the mode selector. The built-in field adds to or opposes the applied field, yielding nonvolatile RS under positive sweeps and volatile TS with self-reset under negative sweeps in the same device. The approach is process-compatible across C

Indexed as

asymmetric contactscompute‐in‐memoryhalide perovskite memristorneuromorphic computingvolatile threshold switchingvoltage‐programmable switching

Identifiers

PMID42301991
PMCPMC13485026

What OpenQuestion holds

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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.