ArticleAdvanced materials (Deerfield Beach, Fla.)2026
Rolling Up Transition Metal Chalcogenides/Oxide Heterostructures Enables Polarity-Tunable and High-Switchable Memristors.
Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
What it found
Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.
The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
The trial behind it
Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.
Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.
Who cites it
0 citing papers in PubMed.
No citing paper in PubMed yet.
Corrections and comments
PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.
Authors and funding
14 authors.
Funding
Abstract
Harnessing transition metal dichalcogenides (TMDCs) for memristors provides a promising pathway toward high-density data storage and neuromorphic functionalities. Yet the single operation mode and insufficient on/off ratio extremely restrict the ultimate device performance. Here, we design and construct a high-order superlattice-based memristor by rolling up oxide/TMDCs heterostructures, which exhibits tunable resistive switching polarity and a high on/off ratio. Four types of heterostructures are created via fine-controlled oxygen plasma to in situ oxidize the top few layers into uniform transition metal oxide. Capillary forces in organic reagents are utilized to drive these heterostructures to spontaneously roll up. The as-formed high-order oxide/TMDCs superlattices with alternately stacked TMDCs and oxides are clearly resolved by the cross-section scanning transmission electron microscope and corresponding elemental mappings. With pre-set oxide layers supplying mobile oxygen atoms, bipolar resistive switching of the high-order superlattice-based memristors is realized in vertical tunneling current measurements. In contrast, when the top and bottom electrodes are arranged in an interleaved configuration, the spatial confinement of conductive filaments converts the switching behavior into a unipolar mode. Furthermore, this polarity-tunable memristor exhibits an outstanding on/off ratio of approximately 10
Indexed as
Identifiers
What OpenQuestion holds
Registered trials
Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.