Evidence map›Paper›PMID 42286108›Full record

ArticleNature materials2026

Polar nano-regions enable large spin Hall conductivity in metallic PtCoO

Guiping Ji, Yi Zheng, Yuejie Zhang, Yuhan Liang, Renhuai Wei, Hang Zhou, Yuanyuan Jiang, Yang Zhang, Hao Lin, Hao Bai and 26 more

Abstract read
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In one paragraph

Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

36 authors.

Guiping Ji *School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.ORCID http://orcid.org/0009-0009-9835-7625
Yi Zheng *School of Materials Science and Engineering, Tsinghua University, Beijing, China.ORCID http://orcid.org/0009-0009-6948-4334
Yuejie Zhang *School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.ORCID http://orcid.org/0000-0002-6970-129X
Yuhan Liang *School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.
Renhuai Wei *Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.ORCID http://orcid.org/0000-0002-6090-9561
Hang ZhouKey Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.
Yuanyuan JiangKey Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.
Yang ZhangDepartment of Physics, Tsinghua University, Beijing, China.
Hao LinDepartment of Physics, Tsinghua University, Beijing, China.
Hao BaiDepartment of Physics, Tsinghua University, Beijing, China.
Qi SongDepartment of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
Xiaojiang LiDepartment of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
Sankalpa HazraDepartment of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
Aitian ChenPhysical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.ORCID http://orcid.org/0000-0003-3535-9470
Cancheng XiaoSchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.
Dingsong JiangSchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.
Chao LiSchool of Materials Science and Engineering, Tsinghua University, Beijing, China.ORCID http://orcid.org/0009-0002-7032-3094
Zewei HuangDepartment of Physics, Tsinghua University, Beijing, China.
Yifeng DuSchool of Materials Science and Engineering, Hubei University, Wuhan, China.
Witold SkowrońskiInstitute of Electronics, AGH University of Krakow, Krakow, Poland.ORCID http://orcid.org/0000-0002-4568-2688
Jinming GuoSchool of Materials Science and Engineering, Hubei University, Wuhan, China.ORCID http://orcid.org/0000-0003-2556-709X
Peng LiSchool of Microelectronics, University of Science and Technology of China, Hefei, China.ORCID http://orcid.org/0000-0001-8491-0199
Xixiang ZhangPhysical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.ORCID http://orcid.org/0000-0002-3478-6414
Jianshi TangSchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.ORCID http://orcid.org/0000-0001-8369-0067
Venkatraman GopalanDepartment of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.ORCID http://orcid.org/0000-0001-6866-3677
Darrell G SchlomDepartment of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.ORCID http://orcid.org/0000-0003-2493-6113
Luyi YangDepartment of Physics, Tsinghua University, Beijing, China.ORCID http://orcid.org/0000-0001-6260-1395
Wanjun JiangDepartment of Physics, Tsinghua University, Beijing, China.ORCID http://orcid.org/0000-0003-0918-3862
Xuebin ZhuKey Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China. xbzhu@issp.ac.cn.ORCID http://orcid.org/0000-0001-9484-8253
Yuan-Hua LinSchool of Materials Science and Engineering, Tsinghua University, Beijing, China.ORCID http://orcid.org/0000-0002-5652-6701
Di YiSchool of Materials Science and Engineering, Tsinghua University, Beijing, China. diyi@mail.tsinghua.edu.cn.ORCID http://orcid.org/0000-0002-7209-1947
Pu YuDepartment of Physics, Tsinghua University, Beijing, China.ORCID http://orcid.org/0000-0002-5513-7632
Dingfu ShaoKey Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, China.ORCID http://orcid.org/0000-0002-2732-4131
Daniel C RalphDepartment of Physics, Cornell University, Ithaca, NY, USA.ORCID http://orcid.org/0000-0002-3026-0335
Rong YuSchool of Materials Science and Engineering, Tsinghua University, Beijing, China.ORCID http://orcid.org/0000-0003-1687-3597
Tianxiang NanSchool of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China. nantianxiang@mail.tsinghua.edu.cn.ORCID http://orcid.org/0000-0001-6804-2029

Funding

Gordon and Betty Moore Foundation (Gordon E. and Betty I. Moore Foundation) GBMF3850Gordon and Betty Moore Foundation (Gordon E. and Betty I. Moore Foundation) GBMF9073Narodowe Centrum Nauki (National Science Centre) 2021/40/Q/ST5/00209National Natural Science Foundation of China (National Science Foundation of China) 12074212National Natural Science Foundation of China (National Science Foundation of China) 12274410National Natural Science Foundation of China (National Science Foundation of China) 12361141826National Natural Science Foundation of China (National Science Foundation of China) 12421004National Natural Science Foundation of China (National Science Foundation of China) 52025024National Natural Science Foundation of China (National Science Foundation of China) 52250418National Science Foundation (NSF) DMR-2104268Natural Science Foundation of Beijing Municipality (Beijing Natural Science Foundation) Z240006U.S. Department of Energy (DOE) DE-SC 0012375U.S. Department of Energy (DOE) DE-SC0026002
6 · The paper itself

Abstract

Spin-source materials for spintronic devices are required to convert charge currents into spin currents efficiently and maintain minimal electrical losses. However, conventional strategies to enhance charge-spin conversion often come at the cost of increasing ohmic dissipation. Here we demonstrate that introducing polar lattice distortions into a highly conductive metal can overcome this trade-off. We report the discovery of polar displacements in PtCoO

Identifiers

PMID42286108

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.