Large Transverse Piezoelectricity in Highly (001)-Oriented PZT Thick Films on Titanium Substrates.

Zefeng Guo, Jun Ouyang, Shijing Chen, Zhenyan Liang, Hongbo Cheng

Abstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

5 authors.

Zefeng GuoSchool of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.

Jun OuyangDepartment of Physics, Seton Hall University, South Orange, NJ 07079, USA.

Shijing ChenHunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.

Zhenyan LiangSchool of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.

Hongbo ChengSchool of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China.

Funding

National Natural Science Foundation of China 92463306Natural Science Foundation of Shandong Province ZR2022ZD39, ZR2022ME031, ZR2023QB119Pilot Project to Integrate Science, Education and Industry of Qilu University of Technology 2024RCKY030the Education Department of Hunan Province/Xiangtan University KZ0807969

6 · The paper itself

Abstract

Integration of lead zirconate titanate (PZT) films on metallic substrates is important for flexible piezoelectric devices, but achieving highly textured crystallinity without detrimental interfacial diffusion or oxidation remains challenging. In this work, PZT thick films (~1.3 μm) were deposited on titanium substrates using radio-frequency magnetron sputtering at 400 °C followed by rapid thermal processing at 640 °C for 2.5 min. A conductive LaNiO

Indexed as

(001) orientationpiezo-MEMSPZT filmrapid thermal processing (RTP)RF magnetron sputteringtitaniumtransverse piezoelectric coefficient/e31,f

Identifiers

PMID42280051

DOI10.3390/ma19112396

PMCPMC13258331

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