Evidence map›Paper›PMID 42261621›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Quantifying the Electrical Excitation Level of Quantum Dots for Mitigating Electroluminescent Efficiency Roll-Off.

Qiuting Cai, Yifan He, Meiyi Zhu, Zhongnan Lou, Zichao Ma, Chao Fan, Junjie Si, Haiping He, Zhizhen Ye, Xingliang Dai

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In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

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4 · The record

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5 · Who and what money

Authors and funding

10 authors.

Qiuting CaiSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Yifan HeWenzhou XINXIN TAIJING Tech. Co., Ltd., Wenzhou, China.
Meiyi ZhuWenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Engineering Research Centre of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou, China.
Zhongnan LouSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Zichao MaSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Chao FanSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Junjie SiCollege of Optical and Electronic Technology, China Jiliang University, Hangzhou, China.
Haiping HeSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.ORCID https://orcid.org/0000-0001-8246-0286
Zhizhen YeSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.ORCID https://orcid.org/0000-0002-0886-0115
Xingliang DaiSchool of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.ORCID https://orcid.org/0000-0001-5288-9700

Funding

National Key Research and Development Program of China 2023YFB3608902National Natural Science Foundation of China U22A20133"Pioneer" and "Leading Goose" R&D Program of Zhejiang 2024C01191Zhejiang Natural Science Foundation LD25F040006
6 · The paper itself

Abstract

Understanding the electrical excitation level of quantum dots in light-emitting diodes (LEDs) constitutes a central aspect of investigations into device mechanisms. However, practical research is hindered by the absence of straightforward and viable analytical methodologies. In this study, we present an approach for assessing device quality by examining the electrical excitation level of quantum dots in conjunction with carrier injection balance. Through quantitative modeling of electroluminescent intensity and the average number of excitons (<N>) generated under electrical excitation, key parameters that manifest the current utilization efficiency can be extracted, providing a guideline to inform device optimization strategies. As a proof of concept, the efficiency roll-off of blue-emitting perovskite quantum dot LEDs is theoretically analyzed. Combining electrically excited transient absorption spectroscopy, hole leakage is identified as the main cause of low current utilization efficiency. Mitigating carrier injection imbalance via enhancing electron injection, the blue device simultaneously achieves a high brightness of over 11 000 cd m

Indexed as

excitation levellight‐emitting diodesquantum dotstheoretical analytical model

Identifiers

PMID42261621
PMCPMC13361150

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.