ArticleNature materials2026
Ultralow-voltage electrochemical organic light-emitting transistors with pinned and wide lateral recombination.
Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. An erratum has been issued. Not yet cited in PubMed.
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Corrections and comments
- Erratum issued
Authors and funding
16 authors.
Funding
Abstract
Light emission from organic transistors holds strong potential for user-interactive functionality across applications ranging from wearable and biointegrated systems to neuromorphic electronics. However, conventional single-active-layer organic transistors suffer from inefficient charge carrier injection, resulting in high drain voltages (>80 V in field-effect devices and >3.5 V in electrochemical devices with p-i-n junctions) and narrow, spatially dynamic recombination zones (<75 μm). Here we report a single-active-layer electrochemical organic light-emitting transistor with drain-side electric double layer formation, achieving ultralow-voltage operation (<3.5 V) together with a wide, spatially pinned recombination zone. An ion transport enhancer in the light-emitting polymer channel induces an electric double layer at the drain electrode, overcoming limited electron injection without n-type doping. This mechanism enables flexible, large-area devices with a recombination zone width of 267 μm and a maximum luminance of 826 cd m
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42259937What OpenQuestion holds
Registered trials
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