Evidence map›Paper›PMID 42230975›Full record

ArticleNature materials2026

Van der Waals strain hardening and large uniform tensile elongation in GaSe.

Sikang Zheng, Xiaolong Yang, Jianfei Zhang, Jiabao Zhang, Jingwei Li, Xiaoyuan Zhou, Bin Zhang, Lihua Wang, Daliang Zhang, Zibing An and 17 more

Abstract read
PubMed Publisher
In one paragraph

Article in Nature materials, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

27 authors.

Sikang Zheng *Institute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.ORCID http://orcid.org/0000-0002-0578-8875
Xiaolong Yang *Institute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.ORCID http://orcid.org/0000-0002-3249-483X
Jianfei Zhang *Beijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China.
Jiabao Zhang *Beijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China.
Jingwei Li *Institute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.
Xiaoyuan ZhouInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China. xiaoyuan2013@cqu.edu.cn.ORCID http://orcid.org/0000-0003-1088-0809
Bin ZhangInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China. xinyun2017@cqu.edu.cn.ORCID http://orcid.org/0000-0003-0503-1503
Lihua WangBeijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China.ORCID http://orcid.org/0000-0002-6143-6348
Daliang ZhangInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.
Zibing AnDepartment of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China.
Yu PanCollege of Materials Science and Engineering and Center of Quantum Materials & Devices, Chongqing University, Chongqing, China.ORCID http://orcid.org/0000-0002-8769-4193
Fan LiInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.
Zizhen ZhouInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.
Shaofeng WangInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.
Kaile ChenInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.ORCID http://orcid.org/0009-0005-6333-9655
Linlin WeiInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.
Xiaomeng YangDepartment of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China.
Menglong WangBeijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China.
Wei LiBeijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China.
Lei WuInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.
Yizhong GuoBeijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China.
Yan MaBeijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China.ORCID http://orcid.org/0009-0001-3346-4886
Xiaobin NiuAnalysis and Testing Center & School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, China.ORCID http://orcid.org/0000-0002-5348-3013
Guang HanCollege of Materials Science and Engineering and Center of Quantum Materials & Devices, Chongqing University, Chongqing, China.
Xu LuInstitute of Advanced Interdisciplinary Studies and College of Physics, Chongqing University, Chongqing, China.ORCID http://orcid.org/0000-0002-6460-4204
Guoyu WangCollege of Materials Science and Engineering and Center of Quantum Materials & Devices, Chongqing University, Chongqing, China.
Xiaodong HanBeijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China. hanxd@sustech.edu.cn.ORCID http://orcid.org/0000-0002-3353-3802

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Van der Waals (vdW) semiconductors are promising candidates for next-generation electronic devices. Although plasticity has been observed in these materials, strain hardening and large uniform tensile elongation remain elusive. Here we report that GaSe single crystals exhibit exceptional tensile ductility when loaded along directions inclined to the [0001] zone axis, achieving uniform tensile elongation exceeding 40% together with pronounced strain hardening. Using atomic-resolution, stress-quantified experiments, we uncover a delocalized interlayer shear mechanism in which alternating slip between adjacent vdW layers homogenizes tensile strain and suppresses localization. This cooperative slip process drives an ε-to-γ phase transformation and introduces constrained slip pathways, giving rise to a previously unrecognized vdW strain hardening mechanism. Comparable tensile ductility and strain hardening behaviour are further observed in other chalcogenides, such as InSe and SnSe

Identifiers

PMID42230975

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.