Evidence map›Paper›PMID 42230814›Full record

ArticleNature nanotechnology2026

Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.

Tara Peña, Anton E O Persson, Andrey Krayev, Áshildur Friðriksdóttir, Haotian Su, Yuan-Mau Lee, Young Suh Song, Kathryn Neilson, Zhepeng Zhang, Anh Tuan Hoang and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature nanotechnology, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Article
  2. 2D transistor goes narrower.Nature nanotechnology · 2026
    Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Tara Peña *Department of Electrical Engineering, Stanford University, Stanford, CA, USA. tara.pena@stanford.edu.ORCID http://orcid.org/0000-0002-8404-9543
Anton E O Persson *Department of Electrical Engineering, Stanford University, Stanford, CA, USA. anton.persson@chalmers.se.ORCID http://orcid.org/0000-0003-0895-096X
Andrey KrayevHORIBA Scientific, Novato, CA, USA.ORCID http://orcid.org/0000-0001-7590-4002
Áshildur FriðriksdóttirDepartment of Materials Science & Engineering, Stanford University, Stanford, CA, USA.ORCID http://orcid.org/0000-0003-0506-9544
Haotian SuDepartment of Electrical Engineering, Stanford University, Stanford, CA, USA.ORCID http://orcid.org/0009-0002-7113-0390
Yuan-Mau LeeDepartment of Materials Science & Engineering, Stanford University, Stanford, CA, USA.
Young Suh SongDepartment of Electrical Engineering, Stanford University, Stanford, CA, USA.ORCID http://orcid.org/0000-0002-5229-1693
Kathryn NeilsonDepartment of Electrical Engineering, Stanford University, Stanford, CA, USA.
Zhepeng ZhangDepartment of Materials Science & Engineering, Stanford University, Stanford, CA, USA.
Anh Tuan HoangDepartment of Electrical Engineering, Stanford University, Stanford, CA, USA.ORCID http://orcid.org/0000-0003-0911-1391
Jerry A YangDepartment of Electrical Engineering, Stanford University, Stanford, CA, USA.
Lauren HoangDepartment of Electrical Engineering, Stanford University, Stanford, CA, USA.ORCID http://orcid.org/0009-0001-7556-8560
Shan X WangDepartment of Electrical Engineering, Stanford University, Stanford, CA, USA.ORCID http://orcid.org/0000-0001-8420-9554
Andrew J MannixDepartment of Materials Science & Engineering, Stanford University, Stanford, CA, USA.ORCID http://orcid.org/0000-0003-4788-1506
Paul C McIntyreDepartment of Materials Science & Engineering, Stanford University, Stanford, CA, USA.
Eric PopDepartment of Electrical Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.ORCID http://orcid.org/0000-0003-0436-8534

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Nanoscale transistors demand aggressive scaling of all channel dimensions-length, width and thickness. Two-dimensional semiconductors (2DS) provide the ultimate thickness limit, yet good device performance has largely remained restricted to micrometre-wide channels. Here we report monolayer 2DS nanoribbon transistors with both n- and p-type operation, fabricated by a top-down multipatterning process that includes 'anchored' contacts to limit nanoribbon delamination. This approach achieves channel lengths and widths down to 25-30 nm, with minimal edge degradation confirmed through nanoscale characterization, including tip-enhanced photoluminescence. Integrated with thin high-κ gate dielectrics, the devices deliver on-state currents up to 560, 420 and 130 µA µm

Identifiers

PMID42230814
PMCPMC13293853

What OpenQuestion holds

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LicenceCC BY
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Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.