Evidence map›Paper›PMID 42201677›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Polarization-Enabled Piezoelectric Tellurium-Selenium (Te

Chia-Chen Chung, Mayur Chaudhary, Chia-Hung Lo, Po-Chien Lai, You-Jie Lin, Ruei-Hong Cyu, Yu-Ren Peng, Bing-Ni Gu, Zhao-Feng Lou, Quynh Thi Le and 7 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Chia-Chen ChungDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Mayur ChaudharyDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Chia-Hung LoDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Po-Chien LaiDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
You-Jie LinDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Ruei-Hong CyuDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Yu-Ren PengDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Bing-Ni GuDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Zhao-Feng LouGraduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan.
Quynh Thi LeDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Yi-Jen YuInstrument Center, National Tsing Hua University, Hsinchu, Taiwan.
Yen-Fu LinDepartment of Physics, National Chung Hsing University, Taichung, Taiwan.
Min-Hung LeeGraduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan.
Ying-Hao ChuDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Chang-Hong ShenCollege of Semiconductor Research, National Tsing-Hua University, Hsinchu, Taiwan.
Der-Hsien LienDepartment of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
Yu-Lun ChuehDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan.ORCID https://orcid.org/0000-0002-0155-9987

Funding

Center for Advanced Semiconductor Technology Research under Higher Education Sprout Project of Ministry of EducationMinistry of Science and Technology, Taiwan, R.O.C. 113-2112-M-007-034-MY3Ministry of Science and Technology, Taiwan, R.O.C. 114-2119-M-007-015-MBKMinistry of Science and Technology, Taiwan, R.O.C. 114-2218-E-007-022-MBKMinistry of Science and Technology, Taiwan, R.O.C. 114-2823-8-007-005-Ministry of Science and Technology, Taiwan, R.O.C. 114-2923-E-007-005-MY3Ministry of Science and Technology, Taiwan, R.O.C. MOST 114-2628-E-007-001-National Science and Technology Council of Taiwan 113-2112-M-007-034-MY3National Science and Technology Council of Taiwan 113-2923-E-007-012-MY3National Science and Technology Council of Taiwan 114-2112-M-A49-013-National Science and Technology Council of Taiwan 114-2119-M-007 -015-MBKNational Science and Technology Council of Taiwan 114-2628-E-007-001-National Science and Technology Council of Taiwan 114-2823-8-007-005-National Science and Technology Council of Taiwan 114-2923-E-007-005-MY3Powerchip Semiconductor Manufacturing Corporation (PSMC) 114A0341
6 · The paper itself

Abstract

Two-dimensional materials with piezoelectricity and polarization-enabled electromechanical responses provide a promising basis for multifunctional electronics, including memory devices and neuromorphic computing. In this work, we explore cryogenic physical vapor deposition (cryogenic PVD)-grown Te

Indexed as

memory devicespiezoelectricitytellurium‐based compoundsTexSe1‐x filmstwo‐dimensional (2D) materials

Identifiers

PMID42201677
PMCPMC13335475

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.