Solution-Processed High-k HfO

Jialeen Sairike, Kamale Tuokedaerhan, Serikbek Sailanbek, Zhengang Cai, Haotian Yang

Abstract read

In one paragraph

Article in Materials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Jialeen SairikeSchool of Materials Science and Engineering, Xinjiang University, Urumqi 830046, China.

Kamale TuokedaerhanEducational Laboratory of Semiconductor Device Engineering, Faculty of Physics and Technology, Al-Farabi Kazakh National University, Almaty 050040, Kazakhstan.ORCID 0000-0002-6275-1462

Serikbek SailanbekEducational Laboratory of Semiconductor Device Engineering, Faculty of Physics and Technology, Al-Farabi Kazakh National University, Almaty 050040, Kazakhstan.ORCID 0000-0003-1743-6751

Zhengang CaiSchool of Materials Science and Engineering, Xinjiang University, Urumqi 830046, China.

Haotian YangSchool of Materials Science and Engineering, Xinjiang University, Urumqi 830046, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

With the continuous advancement of display technology and advanced integrated circuits, oxide thin-film transistors (TFTs) have become core devices due to their high mobility, low leakage current and excellent large-area uniformity. To achieve low power consumption, high performance and high reliability, the introduction of high-k gate insulating layers is crucial. Among the numerous high-k materials, hafnium oxide (HfO

Indexed as

HIGH-Kinsulation layerthin film transistor

Identifiers

PMID42195592

DOI10.3390/ma19101954

PMCPMC13208880

What OpenQuestion holds

Textmetadata

LicenceCC BY

Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.