Wafer-Level Transfer of GaN-on-Si Light-Emitting Devices via SiO

Siyi Zhang, Shuhan Zhang, Qian Fan, Xianfeng Ni, Xing Gu

Abstract read

In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it

0cells of the map it votes in

0citing papers in PubMed

–field-weighted citation impact

1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

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0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

5 authors.

Siyi ZhangInstitute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China.

Shuhan ZhangInstitute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China.ORCID 0009-0005-5800-3399

Qian FanInstitute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China.ORCID 0000-0001-7630-2353

Xianfeng NiInstitute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China.

Xing GuInstitute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

GaN-on-Si light-emitting devices have been widely studied in the field of opto-electronics, while their optical performance and characterization accessibility are severely limited by the strong visible light absorption of the native silicon substrate. Conventional substrate transfer technologies often suffer from inherent thermal, optical, or mechanical bottlenecks. In this study, we developed a robust wafer-level substrate transfer strategy for 8-inch green GaN-on-Si light-emitting device wafers, utilizing a hybrid planarization process combined with SiO

Indexed as

GaN-on-SiMicro-LEDsSiO2–SiO2 direct bondingsubstrate transfer

Identifiers

PMID42195524

DOI10.3390/mi17050607

PMCPMC13209415

What OpenQuestion holds

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LicenceCC BY

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.