Evidence map›Paper›PMID 42195428›Full record

ArticleMicromachines2026

An Integrated Photo-Magnetic Sensor Chip Using Giant Magnetoresistance (GMR) and Light-Dependent Resistor (LDR) Technologies Based on Microfabrication Compatibility.

Xuecheng Sun, Xiaolong Chen, Jiao Li, Chunming Ren, Tian Tian, Aiying Guo, Chong Lei

Abstract read
In one paragraph

Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

7 authors.

Xuecheng SunSchool of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China.
Xiaolong ChenSchool of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China.
Jiao LiSchool of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China.ORCID 0000-0003-0604-0014
Chunming RenSchool of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China.
Tian TianSchool of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China.
Aiying GuoSchool of Microelectronics, Shanghai University, Shanghai 200444, China.
Chong LeiNational Key Laboratory of Advanced Micro and Nano Manufacture Technology, Department of Micro-Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.ORCID 0000-0002-7742-7462

Funding

National Defense Basic Scientific Research Program of China (Defense Industrial Technology Development Program) 2025YFB3412002National Natural Science Foundation of China 62404132Shanghai Basic Research Program Integrated Circuit Special Project 25JD1402600Shanghai Key Laboratory of Automotive Smart Networked Interaction Chip and System N99-0144-24-317Shanghai Special Program for Promoting High-Quality Industrial Development Innovation and Development of Pilot Industries (AI Theme) 2025-GZL-RGZN-02074
6 · The paper itself

Abstract

Single-chip integration technology for multifunctional sensors has become an important development direction due to its low power consumption and versatile functionality. However, the fabrication compatibility between different sensing components remains a key challenge for high-performance integrated sensors, often leading to complex processes and increased costs. This work presents a microfabrication-compatible photo-magnetic integrated sensor chip based on micro-nano processing methods. The integrated sensor chip includes giant magnetoresistance (GMR) and a light-dependent resistor (LDR). The fabrication process was based on standard MEMS fabrication with compatibility and cost-effectiveness. The experimental results demonstrated that the chip can simultaneously realize both optical and magnetic detection with magnetic field sensitivity of 3.74 mV/Oe and photodetection sensitivity of 0.79 μA/(μW/cm

Indexed as

giant magnetoresistance (GMR)integrated sensorlight-dependent resistor (LDR)microfabricationmultifunctional sensor

Identifiers

PMID42195428
PMCPMC13209607

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.