ArticleNanomaterials (Basel, Switzerland)2026
Controlled Chemical Synthesis of Color Centers in Nanocrystalline Silicon Carbide.
Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Silicon carbide is a promising material for optically and spin-active point defects relevant to quantum applications. Quantum-relevant color centers are commonly generated by irradiation or implantation, which require specialized infrastructure and may introduce collateral lattice damage. Here, we present a chemical approach in which the influence of synthesis temperature, high-energy ball milling, and aluminum addition on formation, polytype distribution, and defect formation in SiC is investigated. We found that it is possible to create quantum-relevant defects throughout the chemical synthesis, and the temperature and mechanical activation are the dominant parameters governing defect generation. Photoluminescence and electron paramagnetic resonance spectroscopy demonstrate that low synthesis temperatures (1050-1150 °C) in high-energy ball-milled samples yield silicon vacancy and divacancy-related color centers, evidenced by characteristic near-infrared PL emission and high-spin EPR signals with zero-field splitting values D ≈ 1.3 GHz and D ≈ 270 MHz, consistent with neutral divacancies and V
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