ArticleNanomaterials (Basel, Switzerland)2026
Wafer-Scale Electrical Characterization of Al/Al
Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
Josephson junctions are key elements in superconducting qubits. Their efficient wafer-scale characterization is crucial for process control and optimization, motivating analysis approaches that extend beyond conventional cryogenic measurements. In this work, we demonstrate that room temperature (RT) capacitance and current-voltage measurements, combined with appropriate data analysis, enable extraction of relevant junction parameters such as oxide thickness, tunnel coefficient, and interfacial defect density. Furthermore, different charge transport mechanisms can be identified from detailed current-voltage analysis. We evaluate our characterization technique using tunnel junctions fabricated on 200 mm wafers in a complementary metal-oxide-semiconductor (CMOS)-compatible subtractive process. The results show a homogeneous average oxide thickness across the wafer with a variation below 3%. A dependence of the tunnel coefficient on oxide thickness indicates a stoichiometry gradient within the oxide. Additionally, low interfacial defect densities in the range of 70-5000 defects/cm
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