Evidence map›Paper›PMID 42185257›Full record

ArticleNature communications2026

Giant spin-orbit magnetic state readout enhanced by a magnetic tunnel junction.

Yan Huang, Kun Zhang, Guo Liu, Xiaobai Ning, Shiyang Lu, Shijie Xu, Qing Yang, Wenlong Cai, Renyou Xu, Yuxuan Yao and 9 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

19 authors.

Yan Huang *State Key Laboratory of Spintronics, Hangzhou International Innovation Institute & School of Integrated Circuit Science and Engineering, Beihang University, Hangzhou, PR China.
Kun Zhang *State Key Laboratory of Spintronics, Hangzhou International Innovation Institute & School of Integrated Circuit Science and Engineering, Beihang University, Hangzhou, PR China. zhang_kun@buaa.edu.cn.ORCID http://orcid.org/0000-0001-7215-7953
Guo Liu *State Key Laboratory of Spintronics, Hangzhou International Innovation Institute & School of Integrated Circuit Science and Engineering, Beihang University, Hangzhou, PR China.
Xiaobai Ning *State Key Laboratory of Spintronics, Hangzhou International Innovation Institute & School of Integrated Circuit Science and Engineering, Beihang University, Hangzhou, PR China.ORCID http://orcid.org/0009-0004-0206-0522
Shiyang Lu *Fert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.
Shijie Xu *State Key Laboratory of Spintronics, Hangzhou International Innovation Institute & School of Integrated Circuit Science and Engineering, Beihang University, Hangzhou, PR China.ORCID http://orcid.org/0000-0003-2882-1065
Qing Yang *Fert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.
Wenlong CaiFert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.ORCID http://orcid.org/0000-0001-9240-8086
Renyou XuFert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.
Yuxuan YaoFert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.ORCID http://orcid.org/0000-0003-0478-1601
Yu HeFert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.
Jinkai WangState Key Laboratory of Spintronics, Hangzhou International Innovation Institute & School of Integrated Circuit Science and Engineering, Beihang University, Hangzhou, PR China.
Bo LiFert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.
Haozhe YangFert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.
Kewen ShiFert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.ORCID http://orcid.org/0000-0002-1294-3220
Kaihua CaoFert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.
Chao ZhaoFert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, PR China.
Yue ZhangState Key Laboratory of Spintronics, Hangzhou International Innovation Institute & School of Integrated Circuit Science and Engineering, Beihang University, Hangzhou, PR China. yz@buaa.edu.cn.ORCID http://orcid.org/0000-0001-6893-7199
Weisheng ZhaoState Key Laboratory of Spintronics, Hangzhou International Innovation Institute & School of Integrated Circuit Science and Engineering, Beihang University, Hangzhou, PR China. weisheng.zhao@buaa.edu.cn.ORCID http://orcid.org/0000-0001-8088-0404

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Magnetoelectric spin-orbit (MESO) logic, composed of a voltage-controlled magnetoelectric writing module and a spin-orbit readout module, is highly expected to substitute the silicon-based transistors and enable energy-efficient and scalable computing. Nevertheless, the output voltage of readout module based on spin-to-charge conversion is far less than the minimum magnetoelectric writing voltage, which greatly restricts the cascading function of MESO logic. Here, we first propose a magnetic tunnel junction (MTJ)-enhanced MESO logic to implement giant readout signal. Up to 1.5 mV output voltage is obtained, marking a significant improvement of approximately two orders of magnitude compared to previous findings. We ascribe the substantial enhancement to current modulation by junction resistance and the spin filtering effect of MgO-based MTJ. Moreover, the naturally integrated MTJ and MESO enables instantaneous and nonvolatile data exchange between computing module and external unit. Our work not only enhances output signal of readout module for direct cascading of MESO logic but also refines the design architecture, marking a pivotal stride forward in propelling MESO technology toward practical applications.

Identifiers

PMID42185257
PMCPMC13388924

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.