Evidence map›Paper›PMID 42171203›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Imaging Electric Polarization Switching in Multilayer Graphene.

Zhou Zhou, Xiyao Peng, Jianfeng Bi, Jing He, Fei Xue, Jie Jiang, Huizhen Wu, Zhiwen Shi, Haoliang Qian, Toshikaze Kariyado and 1 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
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1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

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Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

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PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

11 authors.

Zhou ZhouSchool of Physics, Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Xiyao PengSchool of Physics, Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Jianfeng BiSchool of Physics, Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Jing HeState Key Laboratory of Chemical Engineering and Low-Carbon Technology, College of Chemical and Biological Engineering, Zhejiang University, Hangzhou, China.
Fei XueSchool of Physics, Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.ORCID https://orcid.org/0000-0001-9039-7088
Jie JiangSchool of Materials Science and Engineering, Zhejiang University, Hangzhou, China.ORCID https://orcid.org/0000-0002-0026-0625
Huizhen WuSchool of Physics, Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.
Zhiwen ShiSchool of Physics and Astronomy and Tsung-Dao Lee Institute, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shanghai Jiao Tong University, Shanghai, China.
Haoliang QianState Key Laboratory of Extreme Photonics and Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China.ORCID https://orcid.org/0000-0003-4200-9479
Toshikaze KariyadoResearch Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Japan.
Sihan ZhaoSchool of Physics, Zhejiang Key Laboratory of Micro-Nano Quantum Chips and Quantum Control, and State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China.ORCID https://orcid.org/0000-0003-2162-734X

Funding

JSPS KAKENHI JP24K06968National Key R&D Program of China 2022YFA1203400National Key R&D Program of China 2023YFA1407900National Natural Science Foundation of China 12174335National Natural Science Foundation of China 12374292National Natural Science Foundation of China 62175217National Natural Science Foundation of China 92580112Zhejiang Provincial Natural Science Foundation of China LR23A040002
6 · The paper itself

Abstract

Fundamentally distinct from the conventional ferroelectrics, the most discriminative hallmark of the emerging 2D sliding ferroelectricity is the polarization switching via the domain wall (DW) sliding. Meanwhile, multilayer graphene has recently attracted immense research attention owing to engineerable strong electron correlation and non-trivial band topology. Here, domain wall sliding-induced electric polarization switching is directly observed for the first time in multilayer graphene. We identify adjacent polar domains of opposite electric polarizations in tetralayer graphene, the thinnest natural graphene polytype with broken inversion and mirror symmetries, by a gate-tunable nanoscale optical imaging technique. Remarkably, we directly observe and realize the DW sliding-induced polarization switching between these polar domains upon application of global and local electric fields and mechanical forces. Our combined experiment and theory find a single DW sliding at the middlemost interface is responsible for the polarization switching. Our work opens new opportunities in studying sliding ferroelectricity in multilayer graphene, and demonstrates a novel optical readout method for sensitively and directly detecting electric polarization in 2D materials.

Indexed as

electric polarizationmultilayer graphenepolarization switchingscanning near‐field optical microscopy

Identifiers

PMID42171203
PMCPMC13335981

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.