Evidence map›Paper›PMID 42170736›Full record

ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Dielectric-Confinement-Induced in-Plane Photoelectric Anisotropy in Isotropic Quasi-1D γ-GaS Nanoribbon.

Jiawei Jing, Jiamei Chen, Xing Xin, Peisong Peng, Zhihao Wu, Weiheng Zhong, Hanyu Zhang, Wanfu Shen, Jihua Zhang, Yuwei Shan and 7 more

Abstract read
In one paragraph

Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

17 authors.

Jiawei JingState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.
Jiamei ChenState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.
Xing XinState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.
Peisong PengState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
Zhihao WuState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.
Weiheng ZhongState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.
Hanyu ZhangState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.
Wanfu ShenState Key Laboratory of Precision Measuring Technology and Instruments, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin, China.ORCID https://orcid.org/0000-0002-3932-5457
Jihua ZhangSongshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Yuwei ShanState Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun, China.
Yuanzheng LiState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.ORCID https://orcid.org/0000-0002-4309-0160
Xingang ZhaoState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.
Wei XinState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.ORCID https://orcid.org/0000-0002-1887-7535
Fang WangState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.ORCID https://orcid.org/0000-0002-3044-0571
Weida HuState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China.ORCID https://orcid.org/0000-0001-5278-8969
Haiyang XuState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.ORCID https://orcid.org/0000-0003-4188-6007
Yichun LiuState Key Laboratory of Integrated Optoelectronics, Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, China.

Funding

111 Center B25030Fund from Jilin Province 20240101318JCNational Key R&D Program of China 2023YFB3611400National Natural Science Foundation of China 12274065National Natural Science Foundation of China 12474421National Natural Science Foundation of China 52025022National Natural Science Foundation of China 62574039
6 · The paper itself

Abstract

The growing demand for polarized photodetection has driven the need for compact, integrated, and multifunctional device architectures. Although one-dimensional (1D) materials are of significant interest for their innate polarization sensitivity among viable integration strategies, current research has largely overlooked the anisotropy induced by geometric dielectric confinement, remaining mainly focused on optoelectronic anisotropy from lattice symmetry breaking. To bridge the gap, here we investigate geometry-governed optoelectronic anisotropy in quasi-1D GaS nanoribbons with intrinsically isotropic atomic structures. Dielectric mismatch between the ribbon and its surroundings leads to a general polarization-dependent photoresponse during near-field scattering. Steady-state and transient spectroscopy further reveal that the dielectric confinement substantially modulates light absorption, phonon scattering, and carrier diffusion. Remarkably, this geometry-governed anisotropy exhibits sufficient strength and robustness to effectively support applications in areas such as polarized imaging, stress mapping, and visual cryptography. Our work provides fundamental insights into the optoelectronic anisotropy of 1D nanomaterials and offers a rational basis for exciting material properties and optimizing device designs in future polarized photonics.

Indexed as

equivalent in‐plane anisotropygeometry‐governed dielectric confinementisotropic materialspolarized photodetectionquasi‐1D γ‐GaS nanoribbon

Identifiers

PMID42170736
PMCPMC13335972

What OpenQuestion holds

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.