Evidence map›Paper›PMID 42168195›Full record

ArticleNature communications2026

Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing.

Jeong-Han Kim, Wonjun Shin, Ryun-Han Koo, Jangsaeng Kim, Eugene Park, Piush Behera, Sojin Kim, Jinseok Hong, Feras Al-Dirini, Been Kwak and 19 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

29 authors.

Jeong-Han Kim *Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea.
Wonjun Shin *Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. swj0107@mit.edu.ORCID http://orcid.org/0009-0004-9488-136X
Ryun-Han Koo *Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Republic of Korea.ORCID http://orcid.org/0000-0002-5708-3308
Jangsaeng Kim *Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.ORCID http://orcid.org/0000-0003-4519-135X
Eugene Park *Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.ORCID http://orcid.org/0000-0001-6573-9162
Piush BeheraResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.ORCID http://orcid.org/0000-0002-7550-0208
Sojin KimDivision of Materials Science and Engineering, Hanyang University, Seoul, Republic of Korea.ORCID http://orcid.org/0009-0004-0341-8434
Jinseok HongDivision of Materials Science and Engineering, Hanyang University, Seoul, Republic of Korea.ORCID http://orcid.org/0009-0003-1489-1860
Feras Al-DiriniResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.ORCID http://orcid.org/0000-0002-7703-2487
Been KwakDepartment of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea.ORCID http://orcid.org/0000-0002-0792-5095
Jiwon YouDepartment of AI Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea.
Jiseong ImDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Republic of Korea.ORCID http://orcid.org/0000-0002-7260-9224
Dooyong KohResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Yejin HongResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Qinyuan XueResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Hyun-Min KimDepartment of Electronic Engineering, Hanyang University, Seoul, Republic of Korea.
Hyunho SeokResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.ORCID http://orcid.org/0000-0002-3189-5930
Youngchan ChoDepartment of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, Republic of Korea.ORCID http://orcid.org/0009-0004-2796-9396
Hwiin JuAdvanced Device Research Laboratory, Semiconductor Research Center, Samsung Electronics, Hwaseong, Republic of Korea.
Wooje JungAdvanced Device Research Laboratory, Semiconductor Research Center, Samsung Electronics, Hwaseong, Republic of Korea.
Kyunghwan LeeAdvanced Device Research Laboratory, Semiconductor Research Center, Samsung Electronics, Hwaseong, Republic of Korea.
Daewon HaAdvanced Device Research Laboratory, Semiconductor Research Center, Samsung Electronics, Hwaseong, Republic of Korea.ORCID http://orcid.org/0000-0002-9061-8626
Jong-Ho LeeDepartment of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Republic of Korea.
Seung-Yong LeeDivision of Materials Science and Engineering, Hanyang University, Seoul, Republic of Korea.ORCID http://orcid.org/0000-0002-8363-4142
Deok-Hwang KwonEnergy Materials Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea.
Frances M RossDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.ORCID http://orcid.org/0000-0003-0838-9770
Youngho KangDepartment of Materials Science and Engineering, Incheon National University, Incheon, Republic of Korea.ORCID http://orcid.org/0000-0003-4532-0027
Suraj S CheemaResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA. sscheema@mit.edu.ORCID http://orcid.org/0000-0001-5878-3624
Daewoong KwonDepartment of Electronic Engineering, Hanyang University, Seoul, Republic of Korea. dw79kwon@hanyang.ac.kr.ORCID http://orcid.org/0000-0003-1159-3406

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

In-memory computing using two-terminal memristors offers a promising route to reduce the energy demands of data-intensive computing. However, current devices scale poorly due to sneak currents and materials that are incompatible with standard complementary metal-oxide-semiconductor and very large-scale integration processes. Here we demonstrate a self-rectifying memristor that unifies resistive switching and diode-like rectification in a single device, a hybrid ferroelectric-ionic tunnel diode fabricated using complementary metal-oxide-semiconductor compatible materials and processes. We harness the collective (ferroelectric-antiferroelectric polymorphism) and defective (ionic) switching behaviors of HfO

Identifiers

PMID42168195
PMCPMC13385777

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.