ArticleChemical science2026
Surface-hydrogenation activity regulation toward robust anti-poisoning of ZrCo-based hydrogen isotope storage materials.
Qianwen Zhou, Yiting Yu, Panpan Zhou, Shunrui Xiao, Jingyu Hu, Xuezhang Xiao, Xingwen Feng, Huaqin Kou, Wenhua Luo, Xiulin Fan and 1 more
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In one paragraphArticle in Chemical science, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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11 authors.
Qianwen ZhouState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University Hangzhou 310058 Zhejiang China lxchen@zju.edu.cn xlfan@zju.edu.cn.
Yiting YuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University Hangzhou 310058 Zhejiang China lxchen@zju.edu.cn xlfan@zju.edu.cn.
Panpan ZhouState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University Hangzhou 310058 Zhejiang China lxchen@zju.edu.cn xlfan@zju.edu.cn.
Shunrui XiaoState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University Hangzhou 310058 Zhejiang China lxchen@zju.edu.cn xlfan@zju.edu.cn.
Jingyu HuState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University Hangzhou 310058 Zhejiang China lxchen@zju.edu.cn xlfan@zju.edu.cn.
Xuezhang XiaoState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University Hangzhou 310058 Zhejiang China lxchen@zju.edu.cn xlfan@zju.edu.cn.ORCID https://orcid.org/0000-0003-4035-5044 Xingwen FengInstitute of Materials, China Academy of Engineering Physics Mianyang 621907 Sichuan China kouhuaqin@caep.cn.
Huaqin KouInstitute of Materials, China Academy of Engineering Physics Mianyang 621907 Sichuan China kouhuaqin@caep.cn.
Wenhua LuoInstitute of Materials, China Academy of Engineering Physics Mianyang 621907 Sichuan China kouhuaqin@caep.cn.
Xiulin FanState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University Hangzhou 310058 Zhejiang China lxchen@zju.edu.cn xlfan@zju.edu.cn.ORCID https://orcid.org/0000-0001-7294-480X Lixin ChenState Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University Hangzhou 310058 Zhejiang China lxchen@zju.edu.cn xlfan@zju.edu.cn.ORCID https://orcid.org/0000-0002-9624-918X Funding
No grant is acknowledged in the PubMed record.
6 · The paper itselfAbstract
The ZrCo alloy is promising for hydrogen isotope storage but suffers from severe CO poisoning due to d-orbital back-donation into CO π* orbitals, leading to strong chemisorption that blocks subsequent hydrogen dissociation. To address this, we conceptualize a surface-hydrogenation activity factor as a descriptor for screening doping elements. This factor integrates key surface chemical parameters, including local lattice distortion, CO adsorption behavior, and the hydrogen dissociation energy barrier. Guided by
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PMID42164437
PMCPMC13186397
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