Evidence map›Paper›PMID 42163556›Full record

ArticleAdvanced materials (Deerfield Beach, Fla.)2026

Stable Analog Weight Programming in Single-Crystalline van der Waals Ferroelectric Transistors for Reliable Computing-in-Memory.

Mengjiao Li, Feng-Shou Yang, Yanan Liu, Chi Zhang, Enlong Li, Jingbo Yang, Che-Yi Lin, Hefei Liu, Chen Luo, Hsing-Chicn Chien and 9 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

19 authors.

Mengjiao LiSchool of Microelectronics, Shanghai University, Jiading, Shanghai, China.ORCID https://orcid.org/0000-0003-4801-560X
Feng-Shou YangInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Yanan LiuSchool of Microelectronics, Shanghai University, Jiading, Shanghai, China.
Chi ZhangSchool of Microelectronics, Shanghai University, Jiading, Shanghai, China.
Enlong LiSchool of Microelectronics, Shanghai University, Jiading, Shanghai, China.
Jingbo YangSchool of Microelectronics, Shanghai University, Jiading, Shanghai, China.
Che-Yi LinDepartment of Physics, National Chung Hsing University, Taichung, Taiwan.
Hefei LiuJohn A. Paulson School of Engineering and Applied Sciences, Harvard University, Massachusetts, USA.
Chen LuoSchool of Microelectronics, Shanghai University, Jiading, Shanghai, China.
Hsing-Chicn ChienInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Yuan-Ming ChangDepartment of Physics, National Chung Hsing University, Taichung, Taiwan.
Jan-Chi YangDepartment of Physics, National Cheng Kung University, Tainan, Taiwan.
Chang-Hong ShenCollege of Semiconductor Research, National Tsing Hua University, Hsinchu, Taiwan.
Yu-Lun ChuehDepartment of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan.ORCID https://orcid.org/0000-0002-0155-9987
Jun LiSchool of Microelectronics, Shanghai University, Jiading, Shanghai, China.ORCID https://orcid.org/0000-0003-0124-1757
Jianhua ZhangSchool of Microelectronics, Shanghai University, Jiading, Shanghai, China.ORCID https://orcid.org/0000-0001-8061-1861
Jiunn-Lin WuDepartment of Computer Science and Engineering, National Chung Hsing University, Taichung, Taiwan.
Po-Wen ChiuInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.ORCID https://orcid.org/0000-0003-4909-0310
Yen-Fu LinDepartment of Physics, National Chung Hsing University, Taichung, Taiwan.

Funding

National Key Research and Development (R&D) Project from the Ministry of Science and Technology 2024YFA1211500National Natural Science Foundation of China 62574123National Science and Technology Council of Taiwan 111-2923-M-005-001-MY3National Science and Technology Council of Taiwan 113-2119-M-007-015-MBKNational Science and Technology Council of Taiwan NSTC 112-2628-M-005-001-MY3
6 · The paper itself

Abstract

Emerging ferroelectric non-volatile memories are revolutionizing von Neumann architectures by providing efficient hardware for both AI training and inference. However, as ferroelectric dimensions scale toward the nanoscale, reliable modulation is hindered by interfacial degradation and phase instability, leading to synaptic weight drift and computational inaccuracies. Here, a high-performance ferroelectric-van der Waals transistor (FeFET) for computing-in-memory by integrating a single-crystalline Bi

Indexed as

artificial neural networkelectronic engineeringferroelectricityneuromorphic engineeringtransistorvon neumann architecture

Identifiers

PMID42163556
PMCPMC13288126

What OpenQuestion holds

Textmetadata
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.