ArticleAdvanced materials (Deerfield Beach, Fla.)2026
Manipulating Carrier Recombination Dynamics Through Rational Dual-Trap Engineering in Exciplex Heterojunction for High-Performance OLEDs.
Article in Advanced materials (Deerfield Beach, Fla.), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
While trap states are traditionally considered as performance-limiting defects in organic light-emitting diodes (OLEDs), this work presents a dual-trap exciplex heterojunction system that strategically engineers trap states to enhance device performance. The tailored electron (4CzTPNBu in p-type host) and hole (PO-01 in n-type host) traps are employed for interfacial bidirectional carrier capture synergistically without compromising carrier transport in the exciplex heterojunction system. This innovative design converts interfacial traps into immediate radiative trap-assisted recombination (TAR) centers with significant expansion of exciton recombination zone, simultaneously preventing carrier transport imbalance and charge accumulation. The yellow OLEDs demonstrate cutting-edge 33.9% external quantum efficiency (EQE), and 453.6 h operational lifetime (LT
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