Evidence map›Paper›PMID 42161987›Full record

ArticleNature communications2026

Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers.

Ngoc Thanh Duong, Swathi Krishna, Minh Chien Nguyen, Hang Sik Kim, Vu Tien Lam, Hamza Zad Gul, Soo Ho Choi, Minjeong Kim, Daekwon Lee, Thi Uyen Tran and 8 more

Abstract read
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Ngoc Thanh Duong *Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0002-0227-4721
Swathi Krishna *Department of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0001-6339-4578
Minh Chien NguyenDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.ORCID http://orcid.org/0009-0001-6991-3591
Hang Sik KimDepartment of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.
Vu Tien LamDepartment of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.
Hamza Zad GulDepartment of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0003-0912-1012
Soo Ho ChoiDepartment of Electrical and Computer Engineering, Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, USA.
Minjeong KimDepartment of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.
Daekwon LeeDepartment of Physics, Research Institute for Materials and Energy Sciences, Jeonbuk National University, Jeonju, Republic of Korea.
Thi Uyen TranDepartment of Smart Fabrication Technology, Sungkyunkwan University, Suwon, Republic of Korea.
Vu Khac DatDepartment of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.
Van Dam DoDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.
Van Huy HoangDepartment of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.
Heesuk RhoDepartment of Physics, Research Institute for Materials and Energy Sciences, Jeonbuk National University, Jeonju, Republic of Korea.
Young-Min KimDepartment of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0003-3220-9004
Woo Jong YuDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.ORCID http://orcid.org/0000-0002-7399-307X
Ki Kang KimDepartment of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea. kikangkim@skku.edu.ORCID http://orcid.org/0000-0003-1008-6744
Seong Chu LimDepartment of Energy Science, Sungkyunkwan University, Suwon, Republic of Korea. seonglim@skku.edu.ORCID http://orcid.org/0000-0002-0751-1458

Funding

National Research Foundation of Korea (NRF) RS-2024-00357405National Research Foundation of Korea (NRF) RS-2024-00433138
6 · The paper itself

Abstract

The discovery of two-dimensional (2D) semiconducting ferroelectric (SFe) materials marks a pivotal step toward the realization of ferroelectric random-access memory. Despite their potential as ideal platforms for ultrafast switching and ultralow power consumption, SFe monolayers remain largely unexplored. In this work, we demonstrate field-effect transistor employing monolayer Janus MoSeS, which exhibits switchable polarization when integrated on an amorphous ZrO

Identifiers

PMID42161987
PMCPMC13381765

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.