ArticleACS energy letters2026
Short-Wave Infrared InAs Quantum-Dot Light-Emitting Diodes with Tunable Electroluminescence beyond 1.4 μm.
Article in ACS energy letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Who cites it
1 citing paper in PubMed.
- Large Colloidal InAs Nanocrystals Synthesized with a Grignard Reagent.Chemistry of materials : a publication of the American Chemical Society · 2026Article
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Authors and funding
7 authors.
Funding
No grant is acknowledged in the PubMed record.
Abstract
Short-wave infrared (SWIR) optoelectronics based on colloidal quantum dots (QDs) have been dominated by heavy-metal chalcogenides for many years (e.g., PbS, HgTe). Here, we present Restriction of Hazardous Substances-compliant InAs/ZnSe core/shell QD light-emitting diodes (LEDs) operating in the SWIR spectral range. The InAs cores are synthesized via a tris-(dimethylamino)-arsine-based continuous-injection method, enabling size control and SWIR spectral tuning. The LEDs employ a hybrid charge-injection stack comprising organic hole-transport layers (poly-TPD/PTAA) and an inorganic ZnMgO electron-transport layer to balance injection into the InAs/ZnSe core/shell QD film. Four different LEDs, with electroluminescence (EL) peaks centered at 1007, 1275, 1300, and 1410 nm, achieve external peak quantum efficiencies of 6.20%, 3.75%, 2.04%, and 1.10%, respectively. This work is the first demonstration of EL from InAs QDs beyond 1100 nm, advancing III-V QDs for SWIR optoelectronic systems in fields such as machine vision and bioimaging.
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Registered trials
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