Reduction Processes in Thin-Film Vanadium Oxides for Application in Optoelectronic Devices.

Dmitriy P Sudas, Vasily O Yapaskurt, Valery A Luzanov, Galina G Yakushcheva, Kirill Kuznetsov, Petr I Kuznetsov

Abstract read

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Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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5 · Who and what money

Authors and funding

6 authors.

Dmitriy P SudasKotel'nikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, Fryazino 141190, Russia.

Vasily O YapaskurtFaculty of Geology, Moscow State University, Moscow 119991, Russia.

Valery A LuzanovKotel'nikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, Fryazino 141190, Russia.ORCID 0000-0002-2961-6656

Galina G YakushchevaKotel'nikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, Fryazino 141190, Russia.

Kirill KuznetsovDepartment of Quantum Electronics, Faculty of Physics, Moscow State University, Moscow 119991, Russia.ORCID 0000-0001-6075-7628

Petr I KuznetsovKotel'nikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, Fryazino Branch, Fryazino 141190, Russia.

Funding

Russian Science Foundation 25-79-00301

6 · The paper itself

Abstract

This article describes a study on the synthesis and annealing processes of thin-film coatings of vanadium oxide on flat, parallel substrates made of quartz glass, sapphire, and silicon, as well as optical fibers using an organometallic precursor, triisopropoxy vanadium (V) oxide. For the first time, optical constants of nanomaterials were estimated in real time during synthesis and subsequent annealed using the lossy-mode resonance effect. The coatings produced in an inert atmosphere after deposition were amorphous, comprising a mixture of VO

Indexed as

annealing process in vanadium oxideslossy-mode resonance effectmetal-to-insulator transitionMOCVD methodV2O5VO2

Identifiers

PMID42117945

DOI10.3390/nano16090528

PMCPMC13164672

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