Evidence map›Paper›PMID 42107104›Full record

ArticleSmall (Weinheim an der Bergstrasse, Germany)2026

Sub-Nanometer Ferroelectric Tunnel Junctions With Record-High on-Current Density Through Synergistic Microwave Annealing and High-Field Activation.

Laeyong Jung, Hojung Jang, Jongseon Seo, Hyunsang Hwang

Abstract read
In one paragraph

Article in Small (Weinheim an der Bergstrasse, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

4 authors.

Laeyong JungCenter For Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
Hojung JangCenter For Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
Jongseon SeoCenter For Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
Hyunsang HwangCenter For Single Atom-Based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.

Funding

National Research Foundation of Korea 2018R1A3B1052693
6 · The paper itself

Abstract

High-density memory systems require a high on-state current density (J

Indexed as

cross point array applicationsferroelectric device based on hafnium oxideferroelectric tunnel junctionshigh‐density memoryultrathin film

Identifiers

PMID42107104
PMCPMC13306945

What OpenQuestion holds

Textmetadata
LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.