ArticleAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026
Stress-to-Light Conversion in an Earth-Abundant Oxide Semiconductor.
Article in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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8 authors.
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Abstract
Stress-to-light conversion in solids represents a unique photonic functionality, yet it has never been realized in a chemically simple and sustainable material. Zinc oxide (ZnO) is an earth-abundant compound widely used in cosmetics, food supplements, paints, and medicinal products since prehistoric times. It is also a promising semiconductor for electronics and photonics owing to its high transparency, high electron mobility, and wide bandgap, more than three times that of silicon. Here, we show that the sustainable semiconductor ZnO exhibits strong near-infrared (NIR) luminescence under elastic stress when defect-engineered to stabilize a p-type state. This transformation overcomes the intrinsic n-type character of ZnO through the partial substitution of Zn
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