Evidence map›Paper›PMID 42086567›Full record

ArticleNature communications2026

Elongated grain morphology for efficient and radiant NIR-II Sn-based perovskite light-emitting diodes.

Xiang Guan, Yuqing Li, Yu Su, Yuanyuan Meng, Han Tong, Yujie Luo, Kebin Lin, Hong Liu, Yuanzhi Wang, Yaqing Li and 8 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Xiang Guan *State Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, School of Information Science and Technology, Fudan University, Shanghai, China.ORCID http://orcid.org/0000-0003-3099-3093
Yuqing Li *Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China.
Yu SuState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, School of Information Science and Technology, Fudan University, Shanghai, China.
Yuanyuan MengXiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China.
Han TongXiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China.ORCID http://orcid.org/0009-0006-0536-4083
Yujie LuoState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, School of Information Science and Technology, Fudan University, Shanghai, China.
Kebin LinXiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China.ORCID http://orcid.org/0009-0001-7349-6057
Hong LiuState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, School of Information Science and Technology, Fudan University, Shanghai, China.
Yuanzhi WangState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, School of Information Science and Technology, Fudan University, Shanghai, China.
Yaqing LiState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, School of Information Science and Technology, Fudan University, Shanghai, China.
Yan ZhangState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, School of Information Science and Technology, Fudan University, Shanghai, China.
Qin ZhangXiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China.
Siwei HaoXiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China.
Xi ChenXiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China.
Shaopeng ZhangXiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China.
Jianxun LuXiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China. jianxun.lu@hqu.edu.cn.ORCID http://orcid.org/0000-0003-3163-405X
Fengxian XieState Key Laboratory of Photovoltaic Science and Technology, Institute of Optoelectronics, School of Information Science and Technology, Fudan University, Shanghai, China. xiefengxian@fudan.edu.cn.ORCID http://orcid.org/0000-0002-6274-9290
Zhanhua WeiXiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China. weizhanhua@hqu.edu.cn.ORCID http://orcid.org/0000-0003-2687-0293

Funding

National Natural Science Foundation of China (National Science Foundation of China) 22179042National Natural Science Foundation of China (National Science Foundation of China) U21A2078
6 · The paper itself

Abstract

Sn-based perovskite light-emitting diodes have attracted considerable attention due to their environmentally friendly properties and potential for second near-infrared window emission. However, intrinsic self-p-doping and high hole mobility of Sn-based perovskites lead to excessive hole injection under high current densities, causing severe hole dissipation and hindering the achievement of high efficiency at high radiance. Here, we present a grain morphology modulation strategy to optimize electron-hole injection and recombination dynamics. By introducing a growth regulator, perovskite grain morphology remarkably transforms from low-lying dendritic structures to elongated island-like formations, which restricts hole over-injection and spatially confines the recombination zone deeper into perovskite bulk. Consequently, optimal devices achieve an external quantum efficiency of 10.7% and a high radiance of 173 W sr

Identifiers

PMID42086567
PMCPMC13346812

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