Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study.

Shuo Zhang, Zhicheng Guo, Qi Shen, Sichao Du, Hao Xie, Wen-Yan Yin

Abstract read

In one paragraph

Article in ACS omega, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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0citing papers in PubMed

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5 · Who and what money

Authors and funding

6 authors.

Shuo ZhangZhejiang Key Laboratory of Quantum Materials and Control, School of Information and Electrical Engineering, Hangzhou City University, Hangzhou 310015, P. R. China.ORCID https://orcid.org/0000-0002-2284-7427

Zhicheng GuoZhejiang Key Laboratory of Quantum Materials and Control, School of Information and Electrical Engineering, Hangzhou City University, Hangzhou 310015, P. R. China.

Qi ShenCollege of Integrated Circuits, Zhejiang University, Hangzhou 311200, P. R. China.

Sichao DuZhejiang Key Laboratory of Quantum Materials and Control, School of Information and Electrical Engineering, Hangzhou City University, Hangzhou 310015, P. R. China.ORCID https://orcid.org/0000-0003-3060-5759

Hao XieZhejiang Key Laboratory of Quantum Materials and Control, School of Information and Electrical Engineering, Hangzhou City University, Hangzhou 310015, P. R. China.

Wen-Yan YinInnovative Institute of Electromagnetic Information and Electronic Integration, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Targeting high-performance and high-density application scenarios, this work systematically investigates the performance limits of ultrashort-channel double-gate (DG) MOSFETs based on halogenated borophene within a density functional theory (DFT)-nonequilibrium Green's function (NEGF) quantum transport simulation framework. Key device metrics such as on-current, subthreshold swing, switching delay, and power consumption are analyzed for both n-type and p-type devices under various gate and underlap lengths. The optimal channel material selection and underlap length configuration are explored. Using B

Identifiers

PMID42077881

DOI10.1021/acsomega.5c09965

PMCPMC13129821

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.