ArticleMicromachines2026
Design and Implementation of High-Capacity DDR3 Micro-Module Based on 3D TSV Advanced Packaging.
Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.
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Authors and funding
6 authors.
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Abstract
To meet the demands for miniaturization, lightweight design, and high performance in modern electronic systems, advanced 3D TSV technology enables a substantial increase in storage capacity even within physically constrained form factors. This paper proposes a schematic design methodology and system-level integrated modeling approach for a four-layer stacked micro-module based on wafer-level packaging. By leveraging heterogeneous chip fan-out technology and TSV-based vertical stacking, the fabricated DDR3 micro-module achieves a compact footprint of 14 × 9 × 3.5 mm, a storage capacity of 4 GB, and a 64-bit bus width. Compared to conventional board-level mounting, the module reduces the footprint area by 95%. Following comprehensive multi-level testing, the micro-module fully complies with standard protocol requirements, enabling a paradigm shift in form factors for mobile computing devices while enhancing computational density and energy efficiency in data center server applications.
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