ArticleMicromachines2026
Influence of the Ge-Chalcogenide Active Layer on Electrical Conduction in Self-Directed Channel Memristors.
Article in Micromachines, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
The self-directed channel (SDC) class of memristors employs a multilayer architecture that is designed to enable robust Ag ion conduction, long cycling lifetime, and thermal stability. While several layers contribute to mechanical and chemical reliability, two layers primarily govern the electrical behavior: the amorphous Ge-chalcogenide active layer that is adjacent to the bottom electrode and the overlying metal-chalcogenide source layer. In this work, we investigate how the variation in the chalcogen species in these two layers influences switching characteristics in the pre-write regime, both in the pristine state and after a write/erase cycle, as well as the conduction behavior at room temperature. The devices were fabricated using Ge-rich chalcogenides containing O, S, Se, or Te, combined with SnS, SnSe, or Ag
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