Evidence map›Paper›PMID 42043621›Full record

ArticleMikrochimica acta2026

Carbon-based field-effect transistor gas sensor modulated by gate electric field for trace-level hydrogen sulfide detection.

Hongtao Kuang, Bohao Liu, Yuqing Li, Jinyong Hu, Bolang Cheng, Jun Hong, Yong Zhang

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Article in Mikrochimica acta, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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1 · What the graph read from it

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The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

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5 · Who and what money

Authors and funding

7 authors.

Hongtao Kuang *School of Physics and Optoelectronics, Xiangtan University, Xiangtan, 411105, PR China.
Bohao Liu *School of Physics and Optoelectronics, Xiangtan University, Xiangtan, 411105, PR China.
Yuqing LiSchool of Physics and Optoelectronics, Xiangtan University, Xiangtan, 411105, PR China.
Jinyong HuSchool of Physics and Optoelectronics, Xiangtan University, Xiangtan, 411105, PR China.
Bolang ChengSchool of Physics and Optoelectronics, Xiangtan University, Xiangtan, 411105, PR China.
Jun HongSchool of Electrical and Information Engineering, Hunan Institute of Technology, Hengyang, 421002, PR China.
Yong ZhangSchool of Physics and Optoelectronics, Xiangtan University, Xiangtan, 411105, PR China. zhangyong@xtu.edu.cn.

Funding

the Hunan Provincial Natural Science Foundation of China 2026JJ50226the National Natural Science Foundation of China 62471425the National Natural Science Foundation of China 62571471the Science and Technology Innovation Program of Hunan Province 2023RC3133the Scientific Research Foundation of Hunan Provincial Education Department 25B0167
6 · The paper itself

Abstract

Inspired by the signal amplification property of the field-effect transistor (FET) enabled by electric field modulation across the conducting channel, a carbon-based FET hydrogen sulfide (H2S) sensor with ionogel sensing material was fabricated, providing trace-level detection without the need of thermal or optical fields. Under an applied back-gate voltage, the working state of the FET sensor could be regulated to the linear region, significantly boosting the sensor’s sensitivity toward low-concentration analytes. The proposed sensor exhibited a room-temperature detection ability toward 0.1-1 ppm of H2S. Leveraging the hydrophobic nature of the ionogel, the sensor showed a slight response variation (6.8%) toward 1 ppm of H2S in the range 10–90% relative humidity (RH). This work provides an electric field modulation strategy for trace-level gas detection, offering a feasible solution for the chip-integrated development of gas sensors.

Indexed as

Carbon-based FETElectric field modulationH2S sensorIonogel

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.