Evidence map›Paper›PMID 42029988›Full record

ArticleNano convergence2026

Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory.

Jonghyun Ko, Jiseong Im, Sung-Ho Park, Jahyun Gu, Joonhyung Cho, Joon Hwang, Ryun-Han Koo, Jangsaeng Kim, Sung Yun Woo, Jong-Ho Lee

Abstract read
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In one paragraph

Article in Nano convergence, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

10 authors.

Jonghyun Ko *Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Jiseong Im *Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Sung-Ho Park *Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Jahyun GuSchool of Electronics Engineering, Kyungpook National University, Daegu, 41566, Korea.
Joonhyung ChoDepartment of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Joon HwangDepartment of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Ryun-Han KooDepartment of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Jangsaeng KimDepartment of System Semiconductor engineering, Sogang University, Seoul, 04107, Korea.
Sung Yun WooSchool of Electronics Engineering, Kyungpook National University, Daegu, 41566, Korea.
Jong-Ho LeeDepartment of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. jhl@snu.ac.kr.ORCID http://orcid.org/0000-0003-3559-9802

Funding

NRF RS-2025-10032968Seoul National University BK21
6 · The paper itself

Abstract

Compute-in-memory (CIM) has emerged as a promising solution to mitigate the data movement bottleneck in von Neumann architectures. While vertical NAND (V-NAND) flash memory has been explored for CIM, its structural constraints, including pass-bias overhead and interconnect parasitic capacitances, limit energy efficiency. In this work, we present a comprehensive comparison between V-NAND and vertical AND (V-AND) flash memory for CIM applications. Analytical modeling and experimental validation demonstrate that V-AND achieves superior energy efficiency, particularly with low-inference-count regimes and increased stack height, by eliminating the bias pass requirement. These results demonstrate that V-AND offers compelling advantages over V-NAND, establishing it as a promising candidate for energy-efficient, scalable, and fast CIM accelerators.

Indexed as

AreaEnergyLatencyV-ANDV-NAND

Identifiers

PMID42029988
PMCPMC13109473

What OpenQuestion holds

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LicenceCC BY
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.