Evidence map›Paper›PMID 42023973›Full record

ReviewAdvanced science (Weinheim, Baden-Wurttemberg, Germany)2026

Ferroelectric Devices for In-Memory and In-Sensor Computing.

Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng

Abstract readReview
In one paragraph

Review in Advanced science (Weinheim, Baden-Wurttemberg, Germany), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

6 authors.

Hong FangSpintronics Institute, University of Jinan, Jinan, P. R. China.
Ronghuan XieSpintronics Institute, University of Jinan, Jinan, P. R. China.
Qiang CaoSpintronics Institute, University of Jinan, Jinan, P. R. China.
Shishen YanSpintronics Institute, University of Jinan, Jinan, P. R. China.
Xiaolin WangInstitute For Superconducting and Electronic Materials, Australian Institute for Innovative Materials, ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of Wollongong, Wollongong, New South Wales, Australia.
Limei ZhengSchool of Physics, Shandong University, Jinan, P. R. China.ORCID https://orcid.org/0000-0003-3676-0549

Funding

National Natural Science Foundation of China 12334006National Natural Science Foundation of China 12474088)Natural Science Foundation of Shandong Province ZR2022YQ43Natural Science Foundation of Shandong Province ZR2025QA07
6 · The paper itself

Abstract

Inspired by biological neural and sensory systems, the in-memory computing and in-sensor computing paradigms have emerged, which integrate computation with memory and processing with sensor respectively, offering a promising solution to address latency and power bottlenecks of traditional von Neumann architectures. Neuromorphic devices such as artificial synapse and neuromorphic sensors are the core components of these innovative computing paradigms. Among various types of neuromorphic devices, ferroelectric devices can not only emulate synaptic weight updates via electric-field-induced dynamic modulation of conductance, but also sense and process multimodal physical stimuli, such as light, mechanical force, and heat. Such multifunctionality enables the integration of sensing, memory, and computation at the device level, positioning ferroelectric devices as an ideal platform for neuromorphic computing and sensing systems. Herein, we present a systematic review of ferroelectric neuromorphic devices for in-memory computing and in-sensor computing. The applications of ferroelectric devices as artificial synapses in in-memory computing are summarized. Furthermore, we examine the applications of ferroelectric devices as sensing elements in in-sensor computing systems and summarize the latest research advances in these fields. Finally, this review outlines the key challenges faced by ferroelectric neuromorphic devices and proposes future development directions to promote their practical applications.

Indexed as

artificial synapseferroelectric devicesin‐memory computingin‐sensor computingneuromorphic sensors

Identifiers

PMID42023973
PMCPMC13325943

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.