ArticleRSC advances2026
Field-free control of magnetism and electronic states in ZGNR/h-BN heterojunctions
Article in RSC advances, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
The pursuit of fully spin-polarized currents remains a central challenge in spintronics. Zigzag graphene nanoribbon/hexagonal boron nitride (ZGNR/h-BN) heterojunctions offer a promising platform due to their stabilized edge states and tunable electronic properties. However, their inherent antiferromagnetic (AFM) order and limited means of external-field-free control hinder practical applications. Here, we demonstrate a deterministic strategy to achieve field-free manipulation of both magnetic order and electronic phases in ZGNR/h-BN heterojunctions by embedding pentagon-octagon (558) topological line defects. Density functional theory calculations reveal that this defect engineering spontaneously drives a transition from the pristine AFM state to a ferrimagnetic (FiM) ground state, originating from spin polarization reconstruction at the defect sites and asymmetric edge moments. Furthermore, the electronic properties exhibit programmable phase transitions: the system evolves from a conventional half-metal to a Dirac half-semimetal with Fermi velocities up to 3 × 10
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