Evidence map›Paper›PMID 41980973›Full record

ArticleNature communications2026

The cylindrical devices with tunable positive, infinite, and negative capacitance for dynamic random access memory.

Hyeon Woo Park, Won-Tae Koo, Dong Ik Suh, Junseong Seo, Panithan Sriboriboon, Yunseok Kim, Seungyong Byun, Youngmo Kim, Ja-Yong Kim, Seung Wook Ryu and 8 more

Abstract read
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

18 authors.

Hyeon Woo Park *Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.ORCID http://orcid.org/0000-0003-0884-0293
Won-Tae Koo *Research & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Dong Ik Suh *Research & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Junseong SeoSchool of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.ORCID http://orcid.org/0009-0002-9599-1638
Panithan SriboriboonSchool of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.
Yunseok KimSchool of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Republic of Korea.ORCID http://orcid.org/0000-0003-1794-1248
Seungyong ByunDepartment of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.
Youngmo KimResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Ja-Yong KimResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Seung Wook RyuResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Heeyoung JeonResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Ki Vin ImResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Gwangyeob LeeResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Taeone YounResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.ORCID http://orcid.org/0009-0008-7982-5959
Seho LeeResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea. seho235.lee@sk.com.
Jaeyun YiResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Seon Yong ChaResearch & Development Division, SK hynix Inc., Icheon, Gyeonggi-do, Republic of Korea.
Cheol Seong HwangDepartment of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea. cheolsh@snu.ac.kr.ORCID http://orcid.org/0000-0002-6254-9758

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Due to a stray field formation from the alternating ferroelectric bound charges of the multidomain state of the ferroelectric thin films, the negative capacitance effect can emerge in the ferroelectric/dielectric bilayer devices. However, the capacitance behavior of the thin ferroelectric/dielectric stacked films in the nanoscale cylindrical structure deviated from the negative capacitance state to unpredicted other states. This work confirmed that the thin (2.0 - 3.0 nm) ferroelectric Hf

Identifiers

PMID41980973
PMCPMC13254098

What OpenQuestion holds

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LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.