High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System.

Gancheng Ye, Jieyin Zhang, Yilin Chen, Ming Ming, Liangxin Liao, Xin Geng, Xinding Zhang, Jianjun Zhang

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Article in Nanomaterials (Basel, Switzerland), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

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8 authors.

Gancheng YeSchool of Physics, South China Normal University, Guangzhou 510631, China.

Jieyin ZhangSongshan Lake Materials Laboratory, Dongguan 523808, China.ORCID 0009-0003-3804-7891

Yilin ChenSongshan Lake Materials Laboratory, Dongguan 523808, China.

Ming MingSongshan Lake Materials Laboratory, Dongguan 523808, China.ORCID 0000-0002-8178-7460

Liangxin LiaoSongshan Lake Materials Laboratory, Dongguan 523808, China.

Xin GengSongshan Lake Materials Laboratory, Dongguan 523808, China.

Xinding ZhangSchool of Physics, South China Normal University, Guangzhou 510631, China.

Jianjun ZhangSongshan Lake Materials Laboratory, Dongguan 523808, China.

Funding

Guangdong Provincial Quantum Science Strategic Initiative GDZX2203001National Key R&D Program of China 2025YFE0217400National Natural Science Foundation of China 12304100, 62225407, 92565304, 92464206Quantum Science and Technology-National Science and Technology Major Project 2021ZD0302300

6 · The paper itself

Abstract

Silicon-based germanium films are promising for the fabrication of low-power, high-performance electronic and optoelectronic devices. In this work, we report an effective approach for directly growing Ge films with ultrahigh carrier mobility on Si (001) substrates using molecular beam epitaxy (MBE). Strain relaxation of the germanium films is realized through the formation of partial dislocations and 90° misfit dislocations at the Ge/Si interface. The Ge film exhibits a smooth surface with a root-mean-square roughness of 0.187 nm and a low threading dislocation density of only 1.2 × 10

Indexed as

Ge filmhall effect measurementsmolecular beam epitaxy

Identifiers

PMID41972639

DOI10.3390/nano16070424

PMCPMC13075179

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