Evidence map›Paper›PMID 41972489›Full record

ArticleNano letters2026

Reversible Thickness Engineering in Amorphous In

Yi-Yu Pan, Chu-Hsiu Hsu, Robert Tseng, Sung-Tsun Wang, Yu-Cheng Chang, Shih-Chieh Chen, Takashi Kimura, Yann-Wen Lan, Der-Hsien Lien

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nano letters, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.

0numbers the graph read from it
0cells of the map it votes in
0citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

0 citing papers in PubMed.

No citing paper in PubMed yet.

4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

9 authors.

Yi-Yu PanInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Chu-Hsiu HsuInstitute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Robert TsengInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Sung-Tsun WangInstitute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Yu-Cheng ChangInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Shih-Chieh ChenInstitute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Takashi KimuraDepartment of Physics, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan.
Yann-Wen LanDepartment of Physics, National Taiwan Normal University, Taipei 116077, Taiwan.
Der-Hsien LienInstitute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.ORCID 0000-0001-6774-2074

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Amorphous oxide semiconductors offer a unique platform for versatile device processing, as their noncrystalline nature eliminates the requirement for lattice matching at the interface and enables low-temperature regrowth and isotropic processing. Leveraging chemical continuity of amorphous surface, this study demonstrates atomic-scale, reversible thickness control of amorphous In

Indexed as

bottom-up processdoping-freeIn2O3oxide semiconductorsthickness controlthreshold voltagetop-down process

Identifiers

PMID41972489
PMCPMC13195641

What OpenQuestion holds

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Registered trials

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Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.