Evidence map›Paper›PMID 41970711›Full record

ArticleInnovation (Cambridge (Mass.))2026

Unconventional electrochromism in boron arsenide crystal induced by charge symmetry enhancement.

Jianchao Li, Penghui Li, Zhanjun Qiu, Zhaofei Tong, Zhiwei Shen, Shenglin Lu, Long Jiang, Xiaolong Feng, Muzi Yang, Fangyan Xie and 16 more

Abstract read
In one paragraph

Article in Innovation (Cambridge (Mass.)), 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 2 papers.

0numbers the graph read from it
0cells of the map it votes in
2citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

2 citing papers in PubMed.

  1. Review
  2. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

26 authors.

Jianchao LiSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Penghui LiCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Zhanjun QiuSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Zhaofei TongSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Zhiwei ShenCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Shenglin LuSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Long JiangInstrumental Analysis & Research Center, Sun Yat-sen University, Guangzhou 510275, China.
Xiaolong FengInstrumental Analysis & Research Center, Sun Yat-sen University, Guangzhou 510275, China.
Muzi YangInstrumental Analysis & Research Center, Sun Yat-sen University, Guangzhou 510275, China.
Fangyan XieInstrumental Analysis & Research Center, Sun Yat-sen University, Guangzhou 510275, China.
Hui LiuSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Jie WeiSchool of Physics, Sun Yat-sen University, Guangzhou 510275, China.
Ke ChenSchool of Physics, Sun Yat-sen University, Guangzhou 510275, China.
Yan LiSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Yong SunSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Yu ShuCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Huawei SongSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Gongzheng YangSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Danni LeiSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Hao CuiSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Zhengping QiaoSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Lin WangCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Bo XuCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Anmin NieCenter for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China.
Fei TianSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.
Chengxin WangSchool of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510006, China.

Funding

No grant is acknowledged in the PubMed record.

6 · The paper itself

Abstract

Electrochromism encompasses phenomena where materials undergo color changes in response to electricity. Conventional understanding attributes electrochromism to redox reactions occurring between phases with distinct band structures. We report an unconventional electrochromic mechanism in boron arsenide (BAs) crystals that challenges this traditional paradigm. Upon application of several volts, these crystals exhibit rapid color transformation from transparent-red to black, reverting to original color upon voltage removal. Comprehensive structural characterization reveals that this color modulation originates from electromechanical effects rather than redox reactions. Specifically, the observed band gap narrowing stems from strain-induced charge symmetry enhancement within BAs. This discovery not only expands the fundamental understanding of electrochromic mechanisms but also establishes BAs as a unique semiconductor exhibiting exceptional physical properties beyond its reported thermal and electrical transport characteristics.

Indexed as

band modulationboron arsenidecharge symmetryelectrochromicsingle crystal

Identifiers

PMID41970711
PMCPMC13069414

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.