ArticleScientific reports2026
Fertile field emission response in scrambled SmNiO
Article in Scientific reports, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Not yet cited in PubMed.
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Abstract
This present work focuses on the synthesis of scrambled SmNiO3 nanopins by the hydrothermal route, structural and morphological characterizations, and observing their potential electric field emission response with density functional theory (DFT) study. The Rietveld refinement of X-ray diffraction (XRD) and Raman characterization study reveals an orthorhombic phase (space group Pnma, No. 62) of SmNiO3, along with Raman-active NiO6 octahedral vibrational modes and Sm-O lattice motion. The high-resolution scanning and tunneling electron microscopy images exhibit monodispersed hierarchically self-assembled pin-like surface morphology with a crystal lattice spacing of 3.16 Å for 110 planes, which offers exceptional field emission response. The chemical states of Sm, Ni, and O were interpreted by X-ray photoelectron (XPS) spectroscopy in +3 oxidation states (4f5 configuration), mixed Ni3⁺/Ni2⁺ valence states, and -2 lattice and defect states, respectively. The current density (J) vs. electric field (E) plots demonstrate a maximum field emission current density ~ 30 µA/cm2 @ 8.4 V/µm, and very enduring field emission current stability was observed over a long period of time, 3 h 20 min, with bright field emission fringes. Very low turn-on (Eturn-on) and threshold (Ethreshold) were discerned ~ 5.1 V/µm @1 µA/cm2 and ~ 7.64 V/µm @10 µA/cm2 from J-E curves. The local work function (φ) was calculated to be ~5.13 eV by density functional theory (DFT) calculations, and the field enhancement factor (β) was measured to be ~3343. The noteworthy electric field emission response, low turn-on field, and long-term stable field emission enable SmNiO3 nanopins to be a high-efficiency electron source for field-emitting display (FED), X-ray source, vacuum transistor device, etc.
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