Evidence map›Paper›PMID 41957028›Full record

ArticleNature communications2026

Polarization Photovoltage Transistor enabling Amplified Responsivity and Sensitivity.

Jiayue Han, Fakun Wang, Chunyu Li, Wenjie Deng, Shi Zhang, Libo Zhang, Fangchen Hu, Zhen Wang, Hongxi Zhou, He Yu and 6 more

Abstract read
PubMed Full text at PMC Publisher
In one paragraph

Article in Nature communications, 2026. The graph could read no effect estimate from its abstract, so it casts no vote on the map. Cited by 1 paper.

0numbers the graph read from it
0cells of the map it votes in
1citing papers in PubMed
–field-weighted citation impact
1 · What the graph read from it

What it found

Each row is one number read from the abstract, on the scale the paper reported it, with its interval. Left of the dashed line favours the treatment, right favours the comparator. Under each row is the sentence it came from. New to these charts? A ten-minute tutorial.

The abstract states no effect estimate the extractor could read, or names no intervention and outcome on the map, so this paper lights no cell and moves no belief. It is still indexed, cited and linked below.

2 · The registry

The trial behind it

Trials whose registry record cites this paper, or whose number appears in the abstract. A trial that started after this paper was published is citing it as background, not reporting it.

Neither the registry nor the abstract names a trial number. If this is a trial report, that itself is worth knowing.

3 · Its place in the literature

Who cites it

1 citing paper in PubMed.

  1. Article
4 · The record

Corrections and comments

PubMed lists nothing against this paper. Absence here is not a guarantee, only a check that was made.

5 · Who and what money

Authors and funding

16 authors.

Jiayue Han *School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.ORCID http://orcid.org/0000-0001-6154-9206
Fakun Wang *Center for OptoElectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore.ORCID http://orcid.org/0009-0006-7958-605X
Chunyu Li *Shimmer Center, Tianfu Jiangxi Laboratory, Chengdu, China.ORCID http://orcid.org/0000-0001-8124-2498
Wenjie DengKey Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing, China.ORCID http://orcid.org/0000-0002-7846-1101
Shi ZhangCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, China.
Libo ZhangCollege of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, China.ORCID http://orcid.org/0000-0001-6840-8780
Fangchen HuZhangjiang Laboratory, Shanghai, China.ORCID http://orcid.org/0000-0003-3859-1558
Zhen WangState Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, China.ORCID http://orcid.org/0000-0002-7072-9003
Hongxi ZhouSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
He YuSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
Jun GouSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
Zhiming WuSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
Zhiming WangShimmer Center, Tianfu Jiangxi Laboratory, Chengdu, China.ORCID http://orcid.org/0000-0001-7847-7704
Yadong JiangSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
Qi Jie WangCenter for OptoElectronics and Biophotonics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore, Singapore. qjwang@ntu.edu.sg.ORCID http://orcid.org/0000-0002-9910-1455
Jun WangSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China. wjun@uestc.edu.cn.ORCID http://orcid.org/0000-0003-2370-2964

Funding

China Postdoctoral Science Foundation 2025M780794National Natural Science Foundation of China (National Science Foundation of China) 62305013National Natural Science Foundation of China (National Science Foundation of China) 62305047
6 · The paper itself

Abstract

With the rapid advancement of multi-dimensional detection, there is an urgent demand for next-generation polarization detectors capable of achieving high responsivity, fast speed, and strong polarization sensitivity, metrics that are typically limited by fundamental trade-offs. Two-dimensional (2D) materials offer a promising platform, yet their weak intrinsic anisotropy constrains polarization ratio (PR) and overall device performance. Here, we report a mid-infrared (MIR) polarization photovoltage field-effect transistor (PPFET) based on black phosphorus/molybdenum disulfide (BP/MoS

Identifiers

PMID41957028
PMCPMC13223294

What OpenQuestion holds

Textmetadata
LicenceCC BY-NC-ND
Read underepoch 390

Registered trials

None linked

Read under generation 80e0d062 · epoch 390. Bibliography from PubMed, PubMed Central and OpenAlex; grants from NIH RePORTER; trial links from ClinicalTrials.gov; estimates, votes and beliefs from the OpenQuestion graph.